Semiconductor Device

ABSTRACT

A semiconductor device includes “n” pairs of pn-junction structures, wherein the i-th pair includes two pn-junction structures of the i-th type, wherein the two pn-junction structures of the i-th type are anti-serially connected, wherein the pn-junction structure of the i-th type has an i-th junction grading coefficient mi. A first pair of the n pairs of pn-junction structures has a first junction grading coefficient m1 and a second pair of the n pairs of pn-junction structures has a second junction grading coefficient m2. The junction grading coefficients m1, m2 are adjusted to result in generation of a spurious third harmonic signal of the semiconductor device with a signal power level, which is at least 10 dB lower than a reference signal power level of the spurious third harmonic signal obtained for a reference case in which the first and second junction grading coefficients m1, m2 are 0.25.

This application is a continuation of U.S. patent application Ser. No.16/538,182, filed Aug. 12, 2019, which application claims the benefit ofGerman Application No. 102018213633.5, filed on Aug. 13, 2018, whichapplications are hereby incorporated herein by reference.

TECHNICAL FIELD

Embodiments relate to a semiconductor device having at least two pairsof anti-serially connected pn-junction structures (also denoted diodestructures herein) with adjusted junction grading coefficients (alsocalled diode power law exponent) for providing an at least reduced or aminimum generation of a spurious odd harmonics, e.g., third harmonics.

Further embodiments relate to a semiconductor device having at least twoanti-serially connected pn-junction structures with adjusted junctiongrading coefficients, wherein one of the two pn-junction structurescomprises a “composite” diode structure, to adjust and obtain a desiredTVS behavior (TVS=transient voltage suppressor) of the semiconductordevice regarding breakdown voltage and to provide an at least reduced ora minimum generation of a spurious odd harmonics, third harmonics.

BACKGROUND

Discrete ESD protection devices (ESD=electrostatic discharge) and TVSdevices (TVS=transient voltage suppressor), in general, have non-linearelectrical properties which cause a harmonic distortion of RF signals(RF=radio frequency) that are present on signal lines, e.g., on PCBlines (PCB=printed circuit board), that are connected to the ESDprotection device or TVS device. This harmonic generation createsspurious and unwanted harmonic signals which may interfere with otherfunctions or functional blocks of an electronic system if thosefunctions or functional blocks use frequency bands that are an integermultiple of the distorted RF signal.

For example, the third harmonic (H3) frequency of certain frequencybands in the range between 800 and 900 MHz used in mobiletelecommunication standards interferes with RF signals in the 2.4GHz-WiFi-band, i.e., in the frequent range between 2.412 and 2.472 GHz.

To avoid such unwanted interferences between the above exemplarilydescribed frequency bands, electronic devices, such as TVS devices,should minimize its harmonic generation to a sufficiently low level.

In known implementations, the generation of even harmonics is, forexample, minimized by utilizing a strictly symmetrical design and ahighly symmetric behavior of the electronic device for positive andnegative half waves of the RF signal. By ensuring asymmetry, evenharmonics can be efficiently suppressed, however, the generation of oddharmonics is not effected or sufficiently suppressed by this approach.

With respect to a minimum generation of odd harmonics, e.g., the thirdharmonic (H3), it has been assumed in the prior art for a long time thata low capacitance and a flat capacitance versus voltage (CV) behavior ofan electronic device leads to a low harmonics generation including thethird harmonic.

However, current researches of the applicant have shown that,considering the comparison of the harmonics generation of electronicdevices with different capacitance values and CV characteristics, theabove approach for suppressing the generation of odd harmonics is notsufficient.

Generally, there is a need in the art for an approach to implementsemiconductor devices, e.g., for discrete ESD protection devices or TVSdevices, having a reduced or minimum generation of odd harmonics, e.g.,of the third harmonic.

Generally, there is a need in the art for an approach to implementsemiconductor devices, e.g., for discrete ESD protection devices or TVSdevices, further having a reduced or tuned breakdown voltage.

SUMMARY

According to an embodiment, a semiconductor device comprises “n” pairsof pn-junction structures, with n is an integer≥2, wherein the i-thpair, with i∈{1, . . . , n}, comprises two pn-junction structures of thei-th type, wherein the two pn-junction structures of the i-th type areanti-serially connected, wherein the pn-junction structure of the i-thtype is arranged to have an i-th junction grading coefficient m_(i),wherein at least a first pair of the n pairs of pn-junction structuresis arranged to have a first junction grading coefficient m₁ with m₁∉{0.00, 0.50} and m₁<0.50 and a second pair of the n pairs ofpn-junction structures is arranged to have a second junction gradingcoefficient m₂ with m₂ ∉{0.00, 0.50}, and wherein the junction gradingcoefficients m₁, m₂ of the first and second pair of the n pairs ofpn-junction structures are adjusted to result in generation of aspurious third harmonic signal of the semiconductor device with a signalpower level (PH3), which is at least 10 dB lower than a (e.g.,simulated) reference signal power level (PH3) of the spurious thirdharmonic signal obtained for a (e.g., simulated) reference case in whichthe first and second junction grading coefficients m₁, m₂ are 0.25.

In a commonly applied model of a pn-junction structure, the i-thjunction grading coefficient m_(i) is determined based on a voltagedependent capacitance characteristic Ci(Vi) of a depletion region of thepn-junction structure of the i-th type for a reverse bias voltage Vapplicable to the pn-junction structure of the i-th type, with

$\begin{matrix}{{{C_{i}( V_{i} )} = \frac{C_{J\;{oi}}}{( {\frac{V_{i}}{V_{Ji}} + 1} )^{m_{i}}}};} & ({A1})\end{matrix}$

wherein C_(Joi) denotes an i-th zero bias junction capacitance andV_(Ji) denotes an i-th junction voltage potential.

The spurious odd harmonics generation, for instance for the referencecase, may be determined by simulations using a standard circuitsimulation tool such as the Advanced Design System (ADS) by KeysightTechnologies for instance by a harmonic balance analysis which isgenerally known in the art.

According to a further embodiment, a semiconductor device comprises “n”pairs of pn-junction structures, with n is an integer≥2, wherein thei-th pair, with i∈{1, . . . , n}, comprises two pn-junction structuresof the i-th type, wherein the two pn-junction structures of the i-thtype are anti-serially connected, wherein the pn-junction structure ofthe i-th type is arranged to have an i-th junction grading coefficientm_(i), wherein the first to n-th junction grading coefficients m₁ tom_(n) comply within a tolerance range of ±0.05 with the followingellipse equation:

${{\sum\limits_{i = 1}^{n}( \frac{m_{i} - 0.25}{a_{i}} )^{2}} = 1},{{{with}\mspace{14mu}{\sum\limits_{i = 1}^{n}( \frac{1}{a_{i}} )^{2}}} = {16}},$

wherein at least a first pair of the n pairs of pn-junction structuresis arranged to have a first junction grading coefficient m₁ with m₁∉{0.00,0.50} and m₁<0.50 and a second pair of the n pairs of pn-junctionstructures is arranged to have a second junction grading coefficient m₂,with m₂ ∉{0.00, 0.50}, and wherein the parameters a_(i) are determinedbased on a zero bias capacitance C_(Joi) and a junction voltagepotential V_(Ji) of the pn-junction structure of the i-th type.

The tolerance range of 0.05 indicates a range for each of the junctiongrading coefficients. In the present context, the grading coefficientsm₁ to m_(n) are considered to comply with the ellipse equation withinthis tolerance range in case the ellipse intersects or at least touchesthe volume defined by the tolerance range around a specific point (m₁ tom_(n)) in the n-dimensional space (coordinate system) of the gradingcoefficient. For illustrative purposes, in the two dimensional case oftwo pairs of pn-junction structures with grading coefficients m₁ and m₂,said volume defined by the tolerance ranges is a circle with diameter0.10 and the specific point (m₁, m₂) in the middle. Thereby,effectively, a range of width 0.10 around the ellipse is defined inwhich possible combinations of grading coefficients m₁ to m₁ may besituated.

Therein the i-th junction grading coefficient m_(i), the zero biasjunction capacitance C_(Joi) and the junction potential V_(Ji) of thepn-junction structure of the i-th type may also be described by theabove mentioned formula (A1).

Thus, embodiments relate to a semiconductor device having at least twopairs of anti-serially connected pn-junction structures with, for eachof the at least two pairs, adjusted junction grading coefficients forproviding an at least reduced or a minimum generation of a spurious oddharmonics, e.g., the third harmonics.

According to a further embodiment, a semiconductor device comprises acomposite pn-junction structure in a semiconductor substrate, whereinthe composite pn-junction structure is arranged to have a predeterminedfirst junction grading coefficient m₁, with m₁>0.50, wherein thecomposite pn-junction structure comprises a first partial pn-junctionstructure and a second partial pn-junction structure, wherein the firstpartial pn-junction structure is arranged to have a predetermined firstpartial junction grading coefficient m₁₁, and wherein the second partialpn-junction structure is arranged to have a predetermined second partialjunction grading coefficient m₁₂, wherein the predetermined firstpartial junction grading coefficient m₁₁ is different to thepredetermined second partial junction grading coefficient m₁₂, withm₁₁≠m₁₂, and wherein at least one of the predetermined first and secondpartial junction grading coefficients m₁₁, m₁₂ is greater than 0.5, withm₁₁ and/or m₁₂>0.5, and wherein the predetermined first junction gradingcoefficient m₁ of the composite pn-junction structure is based on apredetermined combination of the first and second partial junctiongrading coefficients m₁₁, m₁₂.

Thus, embodiments relate to a semiconductor device having at least twopairs of anti-serially connected pn-junction structures with adjustedjunction grading coefficients, wherein at least one of the at least twopairs of pn-junction structures is a pair of anti-serially connectedcomposite pn-junction structures (also denoted composite diode structureherein), to adjust and obtain a desired TVS behavior (TVS=transientvoltage suppressor) of the semiconductor device regarding breakdownvoltage and to provide an at least reduced or a minimum generation of aspurious odd harmonics, e.g., third harmonics.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present concept are described herein making referenceto the appended drawings and figures, wherein:

FIGS. 1a-1d show exemplary schematic circuit diagrams of a semiconductordevice having n pairs of anti-serially connected pn-junction structuresaccording to an embodiment;

FIG. 2 shows an exemplary circuit block diagram for testing thesemiconductor device;

FIGS. 3a-3b show schematic power distributions of RF-signals accordingto an embodiment;

FIG. 4a shows the graphical representation (graph of function) of thecancellation lines of the third harmonic signal of the semiconductordevice as a function of the first and second junction gradingcoefficients m₁, m₂ according to an embodiment;

FIG. 4b shows a zoomed-in plot (view) of FIG. 4 a;

FIG. 4c shows a further graphical representation of the functionalgraphs for which the third harmonic generation PH3 of the semiconductordevice may be optimally suppressed;

FIG. 4d shows a zoomed-in plot (view) of the graphical representation ofFIG. 4 c;

FIG. 4e shows a graphical representation of the parameters a₁, a₂(=radii r₁, r₂) of the ellipse at which the third harmonics PH3generation of the semiconductor device 100 may be optimally suppressed;

FIG. 4f shows a graphical representation of the cancellation lines ofthe third harmonic PH3 of the semiconductor device as a function of thefirst and second junction grading coefficients m₁, m₂ in view of theinfluence of non-equal values for the first and second junction voltagepotentials V_(J1), V_(J2);

FIGS. 4g-4j show the simulated spurious third harmonic PH3 of thesemiconductor device with equal first and second bias junctioncapacitances C_(JO1)=C_(JO2) at different input power levels of thefundamental frequency signal;

FIG. 5a shows a schematic cross-sectional view of a first portion of thesemiconductor device of FIG. 1 a;

FIG. 5b shows a schematic cross-sectional view of a second portion ofthe semiconductor device of FIG. 1 a;

FIG. 5c shows a schematic simulated plot of an exemplary doping profileof pn-junction structures of the semiconductor device of FIG. 5a andFIG. 5 b;

FIG. 6a shows a schematic cross-sectional view of a semiconductor deviceaccording to an embodiment;

FIG. 6b shows a schematic top view of the semiconductor device of FIG. 6a;

FIGS. 7a-7b show exemplary schematic circuit diagrams of a semiconductordevice having n pairs of anti-serially connected pn-junction structuresaccording to an embodiment;

FIG. 8a shows a schematic simulated plot of the resulting junctiongrading coefficient m₁ as a function of the doping concentration basedon different implantation doses for the doping profiles of FIG. 5 c;

FIG. 8b shows a schematic simulated plot of the resulting breakdownvoltage as a function of the doping concentration based on differentimplantation doses for the doping profiles of FIG. 5 c;

FIG. 8c shows the resulting combined junction grading coefficient of thecomposite first type pn-junction structure as a function of the arearatio between the areas of the first and second partial pn-junctionstructures based on two adjusted partial junction grading coefficientsm₁₁, m₁₂ for two of the doping profiles shown in FIG. 5 c;

FIG. 9a shows schematic cross-sectional view of a further exemplaryimplementation of the semiconductor device;

FIG. 9b shows a schematic simulated plot of different exemplary dopingprofiles of the composite pn-junction structure of the semiconductordevice of FIG. 9 a;

FIG. 9c shows a schematic top view through the semiconductor device ofFIG. 9a in the plane through the composite first type pn-junctionstructure showing the “active” areas of the first and second partialanode regions of the first type pn-junction structure; and

FIGS. 9d-9f show schematic cross-sectional views of further exemplaryimplementations of the semiconductor device.

Before discussing embodiments of the present invention in further detailusing the drawings, it is pointed out that in the figures and thespecification identical elements and elements having the samefunctionality and/or the same technical or physical effect are usuallyprovided with the same reference numbers or are identified with the samename, so that the description of these elements and of the functionalitythereof as illustrated in the different embodiments are mutuallyexchangeable or may be applied to one another in the differentembodiments.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

In the following description, embodiments of the invention are discussedin detail, however, it should be appreciated that the invention providesmany applicable concepts that can be embodied in a wide variety ofsemiconductor devices. The specific embodiments discussed are merelyillustrative of specific ways to make and use the invention, and do notlimit the scope of the invention. In the following description ofembodiments, the same or similar elements having the same function haveassociated therewith the same reference signs or the same name, and adescription of the such elements will not be repeated for everyembodiment. Moreover, features of the different embodiments describedhereinafter may be combined with each other, unless specifically notedotherwise.

It is understood that when an element is referred to as being“connected” or “coupled” to another element, it may be directlyconnected or coupled to the other element, or intermediate elements maybe present. Conversely, when an element is referred to as being“directly” connected to another element, “connected” or “coupled,” thereare no intermediate elements. Other terms used to describe therelationship between elements should be construed in a similar fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.).

The abbreviation CV or C(V), respectively, as used herein stands forCapacitance vs. Voltage. The terms C(V) characteristics, C(V) propertiesand C(V) behavior may be used synonymously in this document.

FIGS. 1a-1d show different schematic circuit diagrams of a semiconductordevice 100 having “n” pairs 102, 104 ( . . . ) of anti-seriallyconnected pn-junction structures J₁, J₂, J₃, J₄ ( . . . ), which can beadjusted on the basis of the present concept as described below tocomprise a reduced, for instance strongly reduced, or even minimizedgeneration of a spurious odd harmonics, e.g., third harmonics.

To be more specific, the semiconductor device 100 comprises “n” pairs102, 104 ( . . . ) of pn-junction structures J₁, J₂ and J₃, J₄ ( . . .), with n is an integer≥2, wherein the i-th pair, with i∉{1, . . . , n},comprises two pn-junction structures of the i-th type, wherein the twopn-junction structures of the i-th type are anti-serially connected. Thepn-junction structure of the i-th type is arranged to have an i-thjunction grading coefficient m₁(m₁, m₂, . . . ), an i-th zero biasjunction capacitance C_(Joi), and an i-th junction voltage potentialV_(Ji), and to have the following capacitance behavior C_(i)(V_(i))based on a reverse bias voltage V_(i) applicable to the pn-junctionstructure of the i-th type, with

${C_{i}( V_{i} )} = {\frac{C_{J\;{oi}}}{( {\frac{V_{i}}{V_{Ji}} + 1} )^{m_{i}}}.}$

The C(V) characteristics described by the above equation are also validfor small forward bias voltages. In other words, the expression is alsovalid for a range of applied voltages where the reverse bias voltage isnegative, i.e., the applied voltage is a forward bias voltage. In thisspecification the wording “pn-junction (or diode structure) with agrading coefficient m_(i)” is used to express that the C(V)characteristics of the said pn-junction or diode structure can bedescribed by the above equation with grading coefficient or power lawexponent m_(i).

According to an embodiment, at least a first pair 102 of the n pairs102, 104 ( . . . ) of pn-junction structures J₁, J₂ and J₃, J₄ ( . . . )is arranged to have a first junction grading coefficient m₁ withm₁∉{0.00,0.50} and a second pair 104 of the n pairs 102, 104 ( . . . )of pn-junction structures J₁, J₂ and J₃, J₄ ( . . . ) is arranged tohave a second junction grading coefficient m₂ with m₂ ∉{0.00,0.50}, andwherein the first pair 102 of the pn-junction structures J₁, J₂ isarranged to have the first junction grading coefficient m₁ with m₁<0.50,and wherein the junction grading coefficients m₁, m₂ of the first andsecond pair 102, 104 ( . . . ) of the n pairs of pn-junction structuresJ₁, J₂ and J₃, J₄ ( . . . ) are adjusted to result in generation of aspurious third harmonic signal of the semiconductor device 100 with asignal power level PH3, which is at least 10 dB lower, preferably atleast 15 dB lower, and more preferably at least 20 dB lower, than a(e.g., simulated) reference signal power level PH3 of the spurious thirdharmonic signal obtained for a (e.g., simulated) reference case in whichthe first and second junction grading coefficients m₁, m₂ arerespectively 0.25. It may be preferable from the point of facilitatedmanufacturing of the pn-junction structure that m₁≤0.48 holds.

The second pair 104 of the pn-junction structures J₃, J₄ may be arrangedto have the second junction grading coefficient m₂ with m₂>0.50,preferably m₂≥0.52.

In the reference case, a reference signal power level PH3′ of thespurious third harmonic signal of the semiconductor device 100 issimulated and calculated by setting the reference value of the junctiongrading coefficients m₁, m₂ ( . . . ), i.e., all junction gradingcoefficients m₁, m₂, ( . . . ), which have been adjusted above anddeviate from 0.00 and 0.50, to the reference value of m_(i)=0.25.

According to the above defined embodiment, the junction gradingcoefficients m₁, m₂ ( . . . ) of the n pairs 102, 104 ( . . . ) of thepn-junction structures J₁, J₂ and J₃, J₄ ( . . . ) are adjusted toprovide an at least reduced signal power level of the spurious thirdharmonic signal PH3, when compared to the, e.g., simulated, referencesignal power level PH3′ of the spurious third harmonic signal of thesemiconductor device 100 which is obtained in the reference case inwhich the junction grading coefficients m₁, m₂ ( . . . ) are set to areference value of 0.25. The following evaluations with respect to FIGS.2a-2i , for example, will show that a simulation with a circuitsimulation tool described in further detail below of the referencesignal power level PH3′ of the semiconductor device 100 having thejunction grading coefficients m₁, m₂ ( . . . ) set to the referencevalue of 0.25 relates to a (theoretical) local maximum of the referencesignal power level PH3′ of the spurious third harmonic signal of thesemiconductor device 100.

According to a further embodiment, the semiconductor device 100comprises “n” pairs 102, 104 ( . . . ) of pn-junction structures J₁, J₂and J₃, J₄ ( . . . ), with n being an integer 2, wherein the i-th pair,with i∈{1, . . . , n}, comprises two pn-junction structures of the i-thtype, wherein the two pn-junction structures of the i-th type areanti-serially connected. The pn-junction structure of the i-th type isarranged to have an i-th junction grading coefficient m_(i), an i-thzero bias junction capacitance C_(Joi), and an i-th junction voltagepotential V_(Ji), and to have the following capacitance behaviorC_(i)(V_(i)) based on a reverse bias voltage V_(i) applicable to thepn-junction structure of the i-th type, with

${{C_{i}( V_{i} )} = \frac{C_{J\;{oi}}}{( {\frac{V_{i}}{V_{Ji}} + 1} )^{m_{i}}}};$

andwherein the first to n-th junction grading coefficients m₁ to m_(n)comply within a tolerance range of 0.05 with the following ellipseequation:

${{\sum_{i = 1}^{n}( \frac{m_{i} - 0.25}{a_{i}} )^{2}} = 1},{{{with}\mspace{14mu}{\sum_{i = 1}^{n}( \frac{1}{a_{i}} )^{2}}} = {16}},$

wherein at least a first pair of the n pairs of pn-junction structuresis arranged to have a first junction grading coefficient m₁ withm₁∉{0.00,0.50}, wherein m₁<0.50, and a second pair of the n pairs ofpn-junction structures is arranged to have a second junction gradingcoefficient m₂, with m₂ ∉{0.00,0.50}, and wherein the first to n-thparameters “a₁ to a_(n)” depend on the zero bias capacitances C_(Joi)and the junction voltage potentials V_(Ji) of the pn-junctionstructures. It may be preferable from the point of facilitatedmanufacturing of the pn-junction structure that m₁≤0.45 holds.

The second pair 104 of the pn-junction structures J₃, J₄ may be arrangedto have the second junction grading coefficient m₂ with m₂>0.50,preferably m₂≥0.52.

As indicated above, the first to n-th junction grading coefficients m₁to m_(n) comply within a tolerance range of ±0.05 with the indicated(n-dimensional) ellipse equation. The tolerance range of ±0.05 (or±0.03) may, for example, take into account inevitable semiconductorfabrication tolerances of the semiconductor device 100. The tolerancerange of ±0.05 (or ±0.03) may, for example, further take into account a(possibly appearing) difference between the trajectory of thetheoretical optimum suppression of spurious third harmonics and thetrajectory of the actual (e.g., input power dependent) optimum ofsuppression at different input power levels of the semiconductor device100. This will be described in more detail below with reference to FIGS.4g -4 j.

In the following, schematic circuit diagrams of some possibleimplementations of the semiconductor device 100 according to the presentconcept are described with respect to FIGS. 1a -1 d.

As exemplarily shown in FIG. 1a , the semiconductor device 100 maycomprise n=2 pairs 102, 104 of anti-serially connected pn-junctionstructures J₁, J₂, J₃, J₄, wherein the first pair 102 of the pn-junctionstructures comprises the pn-junction structures J₁, J₂ of the first typehaving the first grading coefficient m₁, the first junction voltagepotential V_(J1) and the first zero bias capacitance C_(Jo1), whereinthe second pair of pn-junction structures 104 comprises the pn-junctionstructures J₃, J₄ of the second type having the second gradingcoefficient m₂, the second junction voltage potential V_(J2) and thesecond zero bias capacitance C_(Jo2). As shown in FIG. 1a , thepn-junction structures J₁, J₂ of the first pair 102 and the pn-junctionstructures J₃, J₄ of the second pair 104 are respectively anti-seriallyconnected, wherein the (at least) two pairs 102, 104 of pn-junctionstructures J₁-J₄ are connected between the first and second terminal107, 108.

FIG. 1b shows a further exemplarily schematic circuit diagram of thesemiconductor device 100 having two (n=2) pairs 102, 104 of pn-junctionstructures J₁, J₂, J₃, J₄, wherein the first pair 102 comprises thepn-junction structures J₁, J₂ of the first type having the first gradingcoefficient m₁, the first junction voltage potential V_(J1) and thefirst zero bias capacitance C_(Jo1), and the second pair 104 comprisesthe pn-junction structures J₃, J₄ of the second type having the secondgrading coefficient m₂, the second junction voltage potential V_(J2) andthe second zero bias capacitance C_(Jo2). As shown in FIG. 1b , thepn-junction structures J₁, J₂ of the first pair 102 are anti-seriallyconnected and the pn-junction structures J₃, J₄ of the second pair 104are anti-serially connected, wherein the (at least) two pairs 102, 104of pn-junction structures J₁-J₄ are connected between the first andsecond terminal 107, 108. The arrangement of the two pairs 102, 104 ofthe pn-junction structures J₁, J₂, J₃, J₄ as shown in FIG. 1b differsonly by an inverted direction of the respective pn-junction structuresJ₁-J₄ when compared to the semiconductor device 100 of FIG. 1 a.

FIG. 1c shows a further schematic circuit diagram of the semiconductordevice 100 having n=2 pairs 102, 104 pairs on pn-junction structures J₁,J₂, J₃, J₄, wherein in FIG. 1c , the first pair 102 comprises thepn-junction structures J₁, J₂ of the first type having the first gradingcoefficient m₁, the first junction voltage potential V_(Ji) and thefirst zero bias capacitance C_(Jo1), wherein the second pair 104comprises the pn-junction structures J₃, J₄ of the second type havingthe second grading coefficient m₂, the second junction voltage potentialV_(J2) and the second zero bias capacitance C_(Jo2). As shown in FIG. 1c, the pn-junction structures J₁, J₂ of the first pair 102 and thepn-junction structures J₃, J₄ of the second pair 104 are respectivelyanti-serially connected, wherein the (at least) two pairs 102, 104 ofpn-junction structures J₁-J₄ are connected between the first and secondterminal 107, 108. The arrangement of the two pairs 102, 104 of thepn-junction structures J₁-J₄ as shown in FIG. 1c differs only by theorder of arrangement of the respective pn-junction structures J₁-J4 whencompared to the semiconductor device 100 of FIG. 1 a.

FIG. 1d shows a further schematic circuit diagram of the semiconductordevice 100 having n=3 pairs 102, 104, 106 of anti-serially connectedpn-junction structures J₁, J₂, J₃, J₄ and J₅, J₆. As shown in Figure id,the first pair 102 comprises the two pn-junction structures J₁, J₂ ofthe first type having the first grading coefficient m₁, the firstjunction voltage potential V_(J1) and the first zero bias capacitanceC_(Jo1), the second pair 104 comprises the pn-junction structures J₃, J₄of the second type having the second grading coefficient m₂, the secondjunction voltage potential V_(J2) and the second zero bias capacitanceC_(Jo2), and wherein the third pair 106 comprises the pn-junctionstructures J₅, J₆ of the third type having the third grading coefficientm₃, the third junction voltage potential V_(J3) and the third zero biascapacitance C_(Jo3), for example. As shown in Figure id, the pn-junctionstructures J₁, J₂ of the first pair 102, the pn-junction structures J₃,J₄ of the second pair 104, and the pn-junction structures J₅, J₆ of thethird pair 104 are respectively anti-serially connected, wherein thethree pairs 102, 104, 106 of pn-junction structures J₁-J₆ are connectedbetween the first and second terminal 107, 108.

The above-described schematic circuit diagrams of the semiconductordevices 100 show that the semiconductor device 100 may comprise aplurality of pairs 102, 104, 106 of pn-junction structures J₁-J₆ whereinthe two associated pn-junction structures of the respective pair areanti-serially arranged or connected, respectively between the first andsecond terminal 107, 108, wherein the order of the respectivepn-junction structures does not influence the resulting reduction ofthird harmonic generation of the semiconductor device so that thedifferent pn-junction structures of the n pairs may be arbitrarilyarranged in an anti-serial manner between the first and second terminal107, 108.

The spurious odd harmonics generation, for instance of the referencecase, may be determined by simulations using a standard circuitsimulation tool such as the Advanced Design System (ADS) by KeysightTechnologies, wherein, for instance, a harmonic balance analysis may beemployed which is generally known in the art. The simulation results maybe compared with a measurement of the spurious harmonics generation of asemiconductor device under test and hence compared with the harmonicgeneration of the reference case to determine a power level of themeasured spurious third harmonics of the device under test relative tothe power level of the spurious third harmonics determined by simulationfor the reference case. Model parameters for the simulation of thereference case, other than the grading coefficient—such as the zero biasjunction capacitance and the junction potential, may be obtained fromthe measurements of the device to be compared by methods generally knownin the art.

A possible circuit set-up for measurement or simulation of harmonicsgeneration of a semiconductor device under test is illustrated by theblock circuit diagram of FIG. 2. It depicts a transmission linecomprising two parts TL1 201 and TL2 202, in which the semiconductordevice under test 200 (shown as four diode structures J₁-J₄ by way ofexample) is connected in shunt configuration to ground. An RF signal isdelivered at a fundamental frequency fo by an RF source PORT1 211 and,on a depicted left end of the transmission line TL1 201, coupled intoTL1 201 by a circulator CIR1 203.

The RF signal is conducted to the semiconductor device under test 200(J₁-J₄), where harmonic signals at integer multitudes of the fundamentalfrequency (overtones) are generated due to non-linearities in theelectrical properties of the semiconductor device under test 200. Thegenerated harmonic signals are transmitted from the semiconductor deviceunder test 200 via TL2 202 to the termination Term2 212 and via TL1 201,the circulator CIR1 203, and transmission line TL3 204 to thetermination Term3 213. By use of a spectrum analyzer (not shown), the RFpower distribution of the harmonic signals can be determined either atthe position of termination Term2 212 or termination Term3 213. Bysweeping the power of the delivered RF signal at the fundamentalfrequency, the input power dependency of the harmonics generation can bedetermined.

The sensitivity of the determination of generated harmonic signal maybefurther increased by adding e.g., additional filters or diplexers (notshown) for filtering out the signal at the fundamental frequency fo.

Typical spectra of the generated RF-signal and the harmonic signals areschematically illustrated in FIGS. 3a and 3b respectively. FIG. 3aillustrates the spectrum of the RF signal as delivered by the RF sourcePORT1 211. This signal is delivered to only consist of the fundamentalfrequency fo (1st harmonic, x=1). FIG. 3b depicts the spectrum of thesignal that is arriving at e.g., termination Term2 212. The signal powerat the fundamental frequency is reduced compared to the incident signalas shown in FIG. 3a , (1) due to impedance mismatch caused by thesemiconductor device under test 200 in shunt configuration, and (2) dueto partial conversion of the electrical signal at the fundamentalfrequency into the overtones, here shown for the second to fourthharmonic for simplicity. The spectrum further shows that the signal inthe e.g., termination Term2 212 also comprises power contributions atinteger multitudes of the fundamental frequency, such as the secondharmonic power PH2 at 2 times fo (2×fo, x=2), third harmonic power PH3at 3 times fo (3×fo,x=3), and so forth. Generally, the powercontribution of the overtones decrease with the order of the harmonic.

The following evaluations provide a comprehensive explanation of thepresent concept in form of the described implementations and embodimentsof the semiconductor device 100 having properly adjusted junctiongradient coefficients m₁ (m₁, m₂, . . . ) according to FIGS. 1a-1d . Inparticular, the following discussion with respect to FIGS. 4a-4j relatesto the technical and mathematical analysis on the field of semiconductordevices, e.g., on the field of discrete ESD protection devices and TVSdevices, respectively, by the applicant and to the technical findingsand conclusions resulting therefrom for properly adjusting the junctiongradient coefficients m_(i) of the n pairs of pn-junction structures ofthe semiconductor device 100.

Under the assumption that the “capacitance versus voltage C(V)characteristics” of a pn-junction structure (or simply a pn-junction) isthe main contributor to the generation of odd harmonics of thesemiconductor device 100, the third harmonic generation can beessentially completely cancelled or at least strongly reduced in case ofa proper adjustment of the C(V) characteristics of the individualpn-junction structures, which may comprise at least two pairs 102, 104 (. . . ) of anti-serially connected pn-junction structures J₁, J₂, J₃, J₄( . . . ).

To be more specific, in case of a connection or stack of e.g., fouranti-serially connected pn-junction structures J₁-J₄ (i.e., two pairs ofpn-junction structures), the third harmonic generation can be cancelledor at least minimized by choosing a suitable combination of C(V)behavior of the different pn-junction structures J₁-J₄ in the fourpn-junction stack, e.g., by suitably choosing the (first and second) njunction gradient coefficients m₁, m₂ according to the below indicatedequations and formulas for the junction gradient coefficients m₁ and theparameters a₁, a₂, which depend on the zero bias capacitances C_(Jo1),C_(Jo2) and junction voltage V_(J1), V_(J2) of the two pairs 102, 104 ofpn-junction structures.

The C(V) behavior of a pn-junction labelled with “i” in the presentdescription to indicate the “i-th” type can generally be described withthe following expression:

$\begin{matrix}{{{{Ci}(V)} = \frac{C_{joi}}{( {\frac{V}{V_{ji}} + 1} )^{mi}}},} & ({A1})\end{matrix}$

In many cases this expression provides an accurate description of theC(V) characteristics of pn-junction structures. The parameters have thefollowing meaning: C_(jo) is the capacitance at 0V bias, V_(ji) is thebuilt-in voltage, and _(mi) is the “junction grading coefficient”. Vrepresents the reverse bias across the i-th pn-junction. As can beappreciated from expression (A1), the junction grading coefficient m₁ isa key parameter to control the C(V) behavior of the pn-junctionstructure and thereby of the semiconductor device 100. m₁ can beadjusted by the doping profile of the respective pn-junction structureJ1-J4 ( . . . ).

Some examples for the grading coefficient m are:

-   -   m=0.5 represents the behavior (1.) of an abrupt pn-junction with        uniform dopants (=doping concentrations) in the n- and the        p-region, or (2.) of a one-sided junction with a very abrupt        pn-junction between a highly-doped region and a uniform doped        lower-doped region. It may be difficult or expensive to realize        this kind of idealized junction with the conventional        semiconductor technologies.    -   m=0.33 represents the behavior of a linearly-graded junction. In        this case the dopant concentration around the junction varies        linearly with depth. This pn-junction type is very common with        the conventional semiconductor technology as a result of        diffusion of a p- and a n-doped region.    -   In the case of m>0.5 the term hyper-abrupt junction is used. It        can be considered as a one-sided junction where the lower doped        region does not have a constant doping profile but rather a        doping concentration that decreases with distance from the        metallurgical junction.

In the following, the mathematical derivation of the optimum C(V)parameters to suppress 3^(rd) harmonics generation of the semiconductordevice 100 is generally discussed. The below derivation may describe theC(V)-characteristics sufficiently well for low input powers P_(in) ofthe input RF-signal, for instance not more than 20 dBm, but may be lessaccurate for higher input powers.

In the following equations (1) to (38) and in related FIGS. 4a to 4j ,the radii r_(i) correspond to the so far described parameters a_(i) ofthe described ellipse equation, that is r_(i)=a_(i). Generally insidethis document the radii r_(i) as described and/or depicted hereincorrespond to the parameters a_(i) as described and/or depicted herein,that is r_(i)=a_(i).

The capacitance vs. voltage behavior of 2 different pn-junctions isexpress by the following equations. These equations can be successfullyused to describe the depletion capacitance behavior under reverse andsmall forward bias conditions of pn-junctions within a wide range ofdoping profiles.

$\begin{matrix}{{C_{1}(V)} = \frac{C_{{J\; 0},1}}{( {\frac{V}{V_{J\; 1}} + 1} )^{m_{1}}}} & (1) \\{{C_{2}(V)} = \frac{C_{{J\; 0},2}}{( {\frac{V}{V_{J\; 2}} + 1} )^{m_{2}}}} & (2)\end{matrix}$

where V is the applied reverse bias voltage, C_(JO1) is the zero biasjunction capacitance, V_(ji) the junction voltage or junction potential(equal or closely related to the built-in voltage, sometimes referred toas “effective built-in voltage”), and m₁ the grading coefficient (alsoreferred to as “diode power law exponent”).

The capacitance voltage behavior equations can be expanded into a Taylorseries:

C ₁(V)=K ₁₀ +K ₁₁ V+K ₁₂ V ²+ . . .  (3)

C ₂(V)=K ₂₀ +K ₂₁ V+K ₂₂ V ²+ . . .  (4)

By integration of the C₁(v) expressions from 0 V to a certain voltageV_(ij) the total charge Q_(ij) is determined. In the case of a seriesconnection of 2 pairs of anti-serial pn-junctions the following are tobe applied to find the charge on each pn-junction, taking into accountthat in each junction pair one junction is reverse biased and one isforward biased.

Q ₁₁(V ₁₁)=∫₀ ^(V) ¹¹ C ₁(V)dV  (5)

Q ₁₂(V ₁₂)=−∫₀ ^(V) ¹² C ₁(V)dv  (6)

Q ₂₁(V ₂₁)=∫₀ ^(V) ²¹ C ₂(V)dV  (7)

Q ₂₂(V ₂₂)=−∫₀ ^(V) ²² C ₂(V)dV  (8)

Applying the integration of capacitance vs. voltage relation C(v) to theseries expansions yields the following expressions:

$\begin{matrix}{{Q_{11} = {{K_{10}V_{11}} + \frac{K_{11}V_{11}^{2}}{2} + \frac{K_{12}V_{11}^{3}}{3} + \;{.\;.\;.}}}\;} & (9) \\{Q_{12} = {{K_{10}V_{12}} - \frac{K_{11}V_{12}^{2}}{2} + \frac{K_{12}V_{12}^{3}}{3} + \;{.\;.\;.}}} & (10) \\{Q_{21} = {{K_{20}V_{21}} + \frac{K_{21}V_{21}^{2}}{2} + \frac{K_{22}V_{21}^{3}}{3} + \;{.\;.\;.}}} & (11) \\{Q_{22} = {{K_{20}V_{22}} - \frac{K_{21}V_{22}^{2}}{2} + \frac{K_{22}V_{22}^{3}}{3} + \;{.\;.\;.\;.}}} & (12)\end{matrix}$

In a series connected configuration of capacitors the charge on allcapacitors is equal:

Q ₁₁ =Q ₁₂ =Q ₂₁ =Q ₂₂ =Q  (13).

By series reversion the charge as function of voltage (Equations 9-12)can be inverted into voltage as function of charge.

$\begin{matrix}{{V_{11} = {{\frac{Q}{24K_{10}^{7}}\lbrack {{24K_{10}^{6}} + {12K_{10}^{4}K_{11}Q} + {K_{10}^{2}{Q^{2}( {{{- 8}K_{10}K_{12}} + {12K_{11}^{2}}} )}} + {5K_{11}{Q^{3}( {{4K_{10}K_{12}} - {3K_{11}^{2}}} )}}} \rbrack} + \;{.\;.\;.}}}\;} & (14) \\{{V_{12} = {{\frac{Q}{24K_{10}^{7}}\lbrack {{24K_{10}^{6}} - {12K_{10}^{4}K_{11}Q} + {K_{10}^{2}{Q^{2}( {{{- 8}K_{10}K_{12}} + {12K_{11}^{2}}} )}} + {5K_{11}{Q^{3}( {{{- 4}K_{10}K_{12}} + {3K_{11}^{2}}} )}}} \rbrack} + \;{.\;.\;.}}}\;} & (15) \\{{V_{21} = {{\frac{Q}{24K_{20}^{7}}\lbrack {{24K_{20}^{6}} + {12K_{20}^{4}K_{21}Q} + {K_{20}^{2}{Q^{2}( {{{- 8}K_{20}K_{22}} + {12K_{21}^{2}}} )}} + {5K_{21}{Q^{3}( {{4K_{20}K_{22}} - {3K_{21}^{2}}} )}}} \rbrack} + \;{.\;.\;.}}}\;} & (16) \\{{V_{22} = {{\frac{Q}{24K_{20}^{7}}\lbrack {{24K_{20}^{6}} - {12K_{20}^{4}K_{21}Q} + {K_{20}^{2}{Q^{2}( {{{- 8}K_{20}K_{22}} + {12K_{21}^{2}}} )}} + {5K_{21}{Q^{3}( {{{- 4}K_{20}K_{22}} + {3K_{21}^{2}}} )}}} \rbrack} + \;{.\;.\;.}}}\;} & (17)\end{matrix}$

The total V across the 2 pairs of anti-series connected pn-junction is

V=V ₁₁ V ₁₂ +V ₂₁ +V ₂₂  (18)

By summation of Equations 14-17 the total voltage V over the seriesconnected pn-junctions as function of charge Q is:

$\begin{matrix}{V = {{2( {\frac{1}{K_{20}} + \frac{1}{K_{10}}} )Q} + {( {\frac{K_{11}^{2}}{K_{10}^{5}} + \frac{K_{21}^{2}}{K_{20}^{5}} - \frac{2K_{12}}{3K_{10}^{4}} - \frac{2K_{22}}{3K_{20}^{4}}} )Q^{3}} + \;{.\;.\;.\;.}}} & (19)\end{matrix}$

By series reversion of Equation 19 the charge Q as function of the totalvoltage V across the series connected pn-junction follows as:

$\begin{matrix}{{Q = {{\frac{K_{10}K_{20}}{2( {K_{10} + K_{20}} )}V} + {\frac{{K_{10}^{5}( {{2K_{20}K_{22}} - {3K_{21}^{2}}} )} + {K_{20}^{5}( {{2K_{10}K_{12}} - {3K_{11}^{2}}} )}}{48K_{10}{K_{20}( {K_{10} + K_{20}} )}^{4}}V^{3}} + \;{.\;.\;.\;.}}}\;} & (20)\end{matrix}$

The capacitance vs. voltage characteristics of the series connectedjunction can be calculated by differentiation of the Q(V) expression(Eq. 20).

$\begin{matrix}{\mspace{79mu}{C = \frac{dQ}{dV}}} & (21) \\{{C = {\frac{K_{10}K_{20}}{2( {K_{10} + K_{20}} )} + {\frac{{K_{10}^{5}( {{2K_{20}K_{22}} - {3K_{21}^{2}}} )} + {K_{20}^{5}( {{2K_{10}K_{12}} - {3K_{11}^{2}}} )}}{16K_{10}{K_{20}( {K_{10} + K_{20}} )}^{4}}V^{2}} + \;{.\;.\;.}}}\;} & (22)\end{matrix}$

We define the coefficients in this resulting series for the C(V)behavior as follows:

C=κ ₀+κ₁ V+κ ₂ V ²+ . . .  (23)

The coefficient of the quadratic term κ₂V² determines the generation ofthe 3^(rd) harmonic. This coefficient κ₂ is:

$\begin{matrix}{\kappa_{2} = \frac{{K_{10}^{5}( {{2K_{20}K_{22}} - {3K_{21}^{2}}} )} + {K_{20}^{5}( {{2K_{10}K_{12}} - {3K_{11}^{2}}} )}}{16K_{10}{K_{20}( {K_{10} + K_{20}} )}^{4}}} & (24)\end{matrix}$

Now the coefficients K₁₀, K₁₁, K₁₂, K₂₀, K₂₁, K₂₂ of the seriesexpansion of the individual pn-junctions are substituted by therespective Taylor Coefficients, that result from a Taylor expansion ofthe C(V) behavior (Equations 1 and 2). After this substitution thecoefficient K₂ of the quadratic term becomes:

$\begin{matrix}{\kappa_{2} = {- {\frac{1}{8( {\frac{1}{C_{{J\; 0},1}} + \frac{1}{C_{{J\; 0},2}}} )^{4}}\lbrack {{\frac{1}{C_{{J0},1}^{3}V_{J\; 1}^{2}}( {m_{1}^{2} - {\frac{1}{2}m_{1}}} )} + {\frac{1}{C_{{J\; 0},2}^{3}V_{J\; 2}^{2}}( {m_{2}^{2} - {\frac{1}{2}m_{2}}} )}} \rbrack}}} & (25)\end{matrix}$

In a series expansion of the C(V) behavior the quadratic term isresponsible for the generation of the third harmonics. If the quadraticterm is zero the 3^(rd) harmonics will cancel out completely.

κ₂=0  (26)

We can transform this expression Eq. 24 for κ₂=0 into the following formwhich describes an ellipse in the m₁, m₂ place:

$\begin{matrix}{{\frac{( {m_{1} - m_{0,1}} )^{2}}{r_{1}^{2}} + \frac{( {m_{2} - m_{0,2}} )^{2}}{r_{2}^{2}}} = 1} & (27)\end{matrix}$

where (m_(0,1),m_(0,2)) is the center point of the ellipse and r₁ and r₂are the radii in the m₁ and m₂ direction, respectively.

Equation 25 under the condition expressed by Equation 26 is transformedinto the form of Equation 27 and thus yields:

$\begin{matrix}{{\frac{( {m_{1} - \frac{1}{4}} )^{2}}{( \frac{\sqrt{{C_{{J\; 0},1}^{3}V_{J\; 1}^{2}} + {C_{{J\; 0},2}^{3}V_{J\; 2}^{2}}}}{4C_{{J\; 0},2}^{\frac{3}{2}}V_{J\; 2}} )^{2}} + \frac{( {m_{2} - \frac{1}{4}} )^{2}}{( \frac{\sqrt{{C_{{J\; 0},1}^{3}V_{J\; 1}^{2}} + {C_{{J\; 0},2}^{3}V_{J\; 2}^{2}}}}{4C_{{J\; 0},1}^{\frac{3}{2}}V_{J\; 1}} )^{2}}} = 1} & (28)\end{matrix}$

from which we can conclude that the 3^(rd) harmonics generation iscancelled if the grading coefficients m₁ and m₂ are located on theellipse, centered at (¼, ¼) with radii r₁ and r₂ as described by thefollowing equations:

$\begin{matrix}{r_{1} = {\frac{1}{4}\sqrt{{( \frac{C_{{J\; 0},1}}{C_{{J\; 0},2}} )^{3}( \frac{V_{J\; 1}}{V_{J\; 2}} )^{2}} + 1}}} & (29) \\{r_{2} = {\frac{1}{4}\sqrt{{( \frac{C_{{J\; 0},2}}{C_{{J\; 0},1}} )^{3}( \frac{V_{J\; 2}}{V_{J\; 1}} )^{2}} + 1}}} & (30)\end{matrix}$

From Equations 29 and 30 we can conclude that the shape of the ellipse,on which the combinations of the grading coefficients m₁ and m₂ falldepends on the ratio of the zero bias capacitances and on the junctionpotentials of both junctions pairs. The zero bias capacitance can bevaried over a wide range by adjusting the doping profile of thepn-junction and/or the physical design (layout) of the pn-junction. Onthe other hand is range of variation of the junction potentialsignificantly smaller, because this parameter is related to the built-involtage of the pn-junction. A usual range of variation of V_(j) for asilicon pn-junction is from about 0.6 to 0.9V. In the case that acertain breakdown voltage needs to be provided by a pn-junction thepossibility to influence V_(j) is very limited and cannot be consideredas a useful parameter for designing the device performance.

The FIGS. 4a-4j as described below show the influence of the deviceparameters, i.e., the zero bias junction capacitances C_(Jo1), C_(Jo2),and the junction voltage potentials V_(J1), V_(J2) on the relationshipbetween the first to n-th (here: second) junction grading coefficientsm₁ to m_(n) (here: m₁ and m₂).

FIG. 4a shows the graphical representation (graph of function) of thecancellation lines of the third harmonic signal PH3 of the semiconductordevice 100 as a function of the first and second junction gradingcoefficients m₁, m₂ according to an embodiment.

Based on the above mathematical derivation of the optimum C(V)parameters, the ellipses of FIG. 4a , on which the combinations of thegrading coefficients m₁, m₂ fall, indicate a cancellation of the thirdharmonic signal PH3 of the semiconductor device 100. Hence theseellipses are also called cancellation lines in the present context. Theshape of the ellipses depends on the ratio of the zero bias capacitancesC_(Jo1), C_(Jo2) and on the junction voltage potentials V_(J1), V_(J2)of both pairs 102, 104 of the pn-junction structures J₁-J₄ of thesemiconductor device 100.

To be more specific, FIG. 4a shows the combinations of the junctiongrading coefficients m₁, m₂, where the third harmonics PH3 generated bythe semiconductor device 100 (e.g., having two pairs 102, 104 ofpn-junction structures J₁, J₂ and J₃, J₃) is zero or at least nearlyzero, wherein the ratio of the zero bias capacitances C_(Jo1), C_(Jo2)determines the shape (=eccentricity) of the ellipse by determining theparameter a_(i) and the parameter a₂ as indicated in above equations 29and 30. As mentioned above, the parameters a_(i) correspond to the radiir_(i) of equations (1) to (31) above and to the radii r_(i) as shown inFIGS. 4a to 4j , that is r_(i)=a_(i). The other parameters, which haveinfluence on the parameters a₁, a₂ of the ellipses, e.g., the first andsecond junction voltage potentials V_(J1), V_(J2), are set, for example,to equal values during calculation of the curves (functional graphs) ofFIG. 4 a.

FIG. 4b shows a zoomed-in plot (view) of FIG. 4a . It can be seen fromFIGS. 4a and 4b that all ellipses have crossing points for (1.) m₁=m₂=0;(2.) m₁=m₂=0.5; (3.) m₁=o and m₂=0.5; and (4.) m₁=0.5 and m₂=0, i.e.,for m_(i) ∈{0.00,0,50}.

FIG. 4c shows a further graphical representation of the functionalgraphs for which the third harmonic generation PH3 of the semiconductordevice 100 is theoretically completely suppressed. To be more specific,FIG. 4c shows the grading coefficient m₂ of the second pair 104 ofpn-junction structures J₃, J₄ for which the third harmonic generationPH3 is completely suppressed, as a function of the ratio of the firstand second zero bias capacitances C_(R)=C_(Jo1)/C_(Jo2). The gradingcoefficient m₁ of the first pair 102 of pn-junction structures J₁, J₂ isa parameter of this plot (functional graph). During calculation of thesecurves of FIG. 4c , the first and second junction voltage potentialsV_(J1), V_(J2) are set to equal values, with V_(R)=V_(Jo1)/V_(Jo2)=1.

FIG. 4d shows a zoomed-in plot (view) of the graphical representation ofFIG. 4 c.

FIG. 4e shows a graphical representation of the parameters a₁, a₂ (radiir₁, r₂) of the ellipse at which the third harmonics PH3 generation ofthe semiconductor device 100 is, at least theoretically, completelysuppressed, as a function of the ratio C_(R) of the first and secondzero bias capacitances C_(Jo1)/C_(Jo2). During calculation of thesecurves, the first and second junction voltage potential V_(J1), V_(J2)are set to equal values, with V_(R)=V_(Jo1)/V_(Jo2)=1.

The relatively large dependency of the first parameter a_(i) (firstradius r₁) of the ellipse from the ratio C_(R) of the first and secondbias capacitances C_(Jo1)/C_(Jo2) reflects the increasing eccentricityof the ellipse as shown in FIG. 4a with respect to the increasing ratioC_(R) of the first and second zero bias capacitancesC_(R)=C_(Jo1)/C_(Jo2).

FIG. 4f shows a graphical representation of the cancellation lines ofthe third harmonic PH3 of the semiconductor device 100 as a function ofthe first and second junction grading coefficients m₁, m₂ in view of theinfluence of non-equal values for the first and second junction voltagepotentials V_(J1), V_(J2), i.e., for V_(R)=V_(Jo1)/V_(Jo2)*1. To be morespecific, FIG. 4f shows the influence of non-equal values for the firstand second junction voltage potential V_(J)i, V_(J2) on the combinationsof the grading coefficients m₁, m₂ that lead to a complete suppressionof the third harmonics PH3 generation of the semiconductor device 100.In the case of FIG. 4f , the first and second zero bias capacitancesC_(Jo1), C_(Jo2) are set to equal values, with C_(Jo1)=C_(Jo2). Thejunction voltage potential V_(J2) of the second pair 104 of pn-junctionstructures J₃, J₄ is set to a fixed value V_(J2)=0.8.

FIGS. 4g-4j show graphical representations of the respective powerlevels PH3 of the third harmonic for the semiconductor device 100 as afunction of the first and second junction grading coefficients m₁, m₂ asa result of simulation using for instance the method as explained abovewith reference to FIGS. 2 and 3. Also shown in FIGS. 4g-4j is thetheoretical cancellation line (=the trajectory of the theoreticaloptimum suppression of the third harmonics PH3 for low input powerlevels P_(IN)). To be more specific, FIGS. 4g-4j show the simulatedspurious third harmonic PH3 of the semiconductor device 100 with equalfirst and second zero bias junction capacitances C_(Jo1)=C_(Jo2) atdifferent input power levels P_(IN) (FIG. 4g P_(IN)=−10 dBm; FIG. 4hP_(IN)=0 dBm; and FIG. 4i P_(IN)=+10 dBm) of the fundamental frequencyRF signal (e.g., using the circuit simulation tool described above). Thetrajectory of the theoretical optimum of PH3 suppression according tothe derivation described above (also called the cancellation lineherein) is represented by the curve “A” (“gray” curve). At lower inputpower levels P_(IN), the minimum third harmonic PH3 of the circuitsimulation and the theoretical derivation (curve “A”) are matching veryclosely, wherein for increasing input power levels P_(IN), the deviationof the minimum third harmonic PH3 resulting from the circuit simulationand from the theoretical optimum suppression (curve “A”) becomessomewhat more pronounced, but remains moderate for the studied inputpowers and up to 20 dBm.

It is to be noted that the ragged features of the isolines in FIGS.4g-4j and even the appearance of disconnected isoline regions near thecancellation line in the contour plots is due to the algorithm used togenerate the contour plots from a simulation data set in which thesimulation data is only present for a finite number of simulated m₁, m₂combinations which are located on a regular rectangular mesh.

The change of the optimal junction grading coefficient with input powercan be seen also from FIG. 4j which shows the simulated PH3 power levelas a function of the junction grading coefficient m₂ for different inputpowers P_(IN) (−10 dBm, 0 dBm, 10 dBm and 20 dBm). The junction gradingcoefficient m₁ is kept fixed at m₁=0.25, wherein further C_(Jo1)=C_(Jo2)is set. The power levels are normalized to the local maximum atm₁=m₂=0.25 (reference case) to better compare the results. Therefrom, itcan be appreciated that suppression of the generation of the spuriousthird harmonics can be optimized for an expected predetermined inputpower level. To this end, it may also be possible to purposefullydeviate from the curve “A”, which is analytically derived for smallinput power levels P_(IN), and to arrange the pn-junction structureswith respective junction grading coefficients designed to suppress thegeneration of the spurious third harmonics with respect to the referencecase by a desired amount for a predetermined input level P_(IN) usingresults from the above described simulation by the circuit simulationtool.

Moreover, it may only be necessary to reproduce the optimal junctiongrading coefficients up to a certain accuracy depending on the desiredlevel of suppression. For instance if the power level of the spuriousthird harmonics is to be suppressed by 10 dB relative to the referencecase, a deviation of ±0.05 for the junction grading coefficients m₂ maybe acceptable. To achieve higher level of suppression, a smallerdeviation of ±0.03 or even ±0.02 maybe desirable. Similar considerationshold for the junction grading coefficient m₁ or generally speakingm_(i).

The relationship between the simulated PH3 values and the optimal value(curve “A”) is also valid for unequal zero-bias capacitances C_(Jo,1),C_(Jo,2), which lead to an increasing eccentricity of the ellipses, asdescribed with respect to FIG. 4 a.

In the following, the mathematical derivation of the optimum C(V)parameters to suppress 3^(rd) harmonics generation is extended to three(n=3) pairs 102, 104, 106 of anti-serially connected pn-junctionstructures J₁, J₂ and J₃, J₄ and J₅, J₆ and further generalized to npairs.

By using the same steps described above we can determine the conditionsunder which the 3^(rd) harmonics generation is cancelled for 3 pair ofanti-serial connected pn-junctions. In this case the quadraticcoefficient of series expansion of the C(V) behavior follow as:

$\begin{matrix}{\kappa_{2} = {{- {\frac{1}{8( {\frac{1}{C_{{J\; 0},3}} + \frac{1}{C_{{J\; 0},2}} + \frac{1}{C_{{J\; 0},1}}} )^{4}}\lbrack {{\frac{1}{C_{{J\; 0},1}^{3}V_{J\; 1}^{2}}( {m_{1}^{2} - {\frac{1}{2}m_{1}}} )} + {\frac{1}{C_{{J\; 0},2}^{3}V_{J\; 2}^{2}}( {m_{2}^{2} - {\frac{1}{2}m_{2}}} )} + {\frac{1}{C_{{J\; 0},3}^{3}V_{J\; 3}^{2}}( {m_{3}^{2} - {\frac{1}{2}m_{3}}} )}} \rbrack}} = 0}} & (31)\end{matrix}$

which can be further simplified in:

$\begin{matrix}{{{\frac{1}{C_{{J\; 0},1}^{3}V_{J\; 1}^{2}}( {m_{1} - \frac{1}{4}} )^{2}} + {\frac{1}{C_{{J\; 0},2}^{3}V_{J\; 2}^{2}}( {m_{2} - \frac{1}{4}} )^{2}} + {\frac{1}{C_{{J\; 0},3}^{3}V_{J\; 3}^{2}}( {m_{3} - \frac{1}{4}} )^{2}}} = {\frac{1}{16}( {\frac{1}{C_{{J\; 0},1}^{3}V_{J\; 1}^{2}} + \frac{1}{C_{{J\; 0},2}^{3}V_{J\; 2}^{2}} + \frac{1}{C_{{J\; 0},3}^{3}V_{J\; 3}^{2}} +} )}} & (32)\end{matrix}$

This is a 3 dimensional ellipsoid with the following generic form:

$\begin{matrix}{{\frac{( {m_{1} - m_{0.1}} )^{2}}{r_{1}^{2}} + \frac{( {m_{2} - m_{0.2}} )^{2}}{r_{2}^{2}} + \frac{( {m_{3} - m_{0.3}} )^{2}}{r_{3}^{2}}} = 1} & (33)\end{matrix}$

with the center point m_(0,i)=¼ for i∈{1, . . . , n} and radii

$\begin{matrix}{r_{1} = {\frac{1}{4}\sqrt{{( \frac{C_{{J\; 0},1}}{C_{{J\; 0},2}} )^{3}( \frac{V_{J\; 1}}{V_{J\; 2}} )^{2}} + {( \frac{C_{{J\; 0},1}}{C_{{J\; 0},3}} )^{3}( \frac{V_{J\; 1}}{V_{J\; 3}} )^{2}} + 1}}} & (34) \\{r_{2} = {\frac{1}{4}\sqrt{{( \frac{C_{{J\; 0},2}}{C_{{J\; 0},1}} )^{3}( \frac{V_{J\; 2}}{V_{J\; 1}} )^{2}} + {( \frac{C_{{J\; 0},2}}{C_{{J\; 0},3}} )^{3}( \frac{V_{J\; 2}}{V_{J\; 3}} )^{2}} + 1}}} & (35) \\{r_{3} = {\frac{1}{4}\sqrt{{( \frac{C_{{J\; 0},3}}{C_{{J\; 0},1}} )^{3}( \frac{V_{J\; 3}}{V_{J\; 1}} )^{2}} + {( \frac{C_{{J\; 0},3}}{C_{{J\; 0},2}} )^{3}( \frac{V_{J\; 3}}{V_{J\; 2}} )^{2}} + 1}}} & (36)\end{matrix}$

Generalization for n pn-junction pairs: all combinations of m₁ withi∈{1, . . . , n} which lay on the following n-dimensional ellipsoid leadto a cancellation of the 3^(rd) harmonics

$\begin{matrix}{{\sum\limits_{i = 1}^{n}( \frac{m_{i} - \frac{1}{4}}{r_{i}} )^{2}} = 1} & (37)\end{matrix}$

where the radii of the ellipsoid r₁ with i∈{1, n} are defined as

$\begin{matrix}{r_{i} = {\frac{1}{4}{\sqrt{\sum\limits_{j = 1}^{n}{( \frac{C_{{J\; 0},i}}{C_{{J\; 0},j}} )^{3}( \frac{V_{J\; i}}{V_{Jj}} )^{2}}}.}}} & (38)\end{matrix}$

In the following, different aspects of the present concept of thesemiconductor device 100 as derivable from the above evaluations aredescribed in detail, wherein the semiconductor device 100 has n (atleast two) pairs 102, 104 ( . . . ) of anti-serially connectedpn-junction structures J₁, J₂, J₃, J₄ ( . . . ) with adjusted junctiongrading coefficients m₁-m_(n) for providing an at least reduced or aminimum generation of a spurious odd harmonics, e.g., third harmonicsfor a predetermined input power level P_(IN).

As derivable from the above evaluations for the semiconductor device 100with n pairs 102, 104 ( . . . ) of anti-serially connected pn-junctionstructures J₁, J₂ and J₃, J₄ ( . . . ) with adjusted junction gradingcoefficients m₁-m_(n), each of the first to n-th parameter “a₁ to a_(n)”is based on the n zero bias capacitances C_(Jo,1)-C_(Jo,n) and on the njunction voltage potentials V_(J1)-V_(Jn) of the n pairs of pn-junctionstructures.

As derivable from the above evaluations for the semiconductor device100, the first to n-th parameter “a₁ to a_(n)” comply with the followingequation:

$a_{i} = {\frac{1}{4}\sqrt{\sum\limits_{j = 1}^{n}{( \frac{C_{{J\; 0},i}}{C_{{J\; 0},j}} )^{3}( \frac{V_{J\; i}}{V_{Jj}} )^{2}}}}$

Based on the above evaluations for the semiconductor device 100 andreferring to FIGS. 4g-4j , the simulated graphical representations ofthe respective power levels PH3 of the third harmonic for thesemiconductor device 100 as a function of the first and second junctiongrading coefficients m₁, m₂ and the theoretical cancellation line show,together with the general derivation above, that the values for thefirst to “n-th” junction grading coefficients m₁ to m_(n) can beadjusted to result in a third-order intercept point IP3 of at least 50dBm, 55 dBm, or even 60 dBm. For instance, a third-order intercept pointIP3 of 50 dBm corresponds to PH3 power level of −70 dBm at 10 dBm inputpower. Therein one of the junction grading coefficients, for instancem₂, can be adjusted to m₂<0.50, preferably to m₂≤0.48 the latter beingadvantageous from the point of manufacturing, as mentioned also above.

According to an embodiment of the semiconductor device 100, at least twoof the first to n-th junction grading coefficient m₁ to m_(n) aredifferent. To be more specific, the “n” pairs of pn-junctions compriseat least a first pair 102 having a first type pn-junction with gradingcoefficient m₁ and a second pair 104 having a second type pn-junctionwith grading coefficient m₂.

According to an embodiment of the semiconductor device 100, forC_(jo1)=C_(jo2), and V_(j1)=V_(j2) the first type pn-junction structuresJ₁, J₂ are arranged to comprise a first junction grading coefficientm₁=0.59±0.03, and wherein the second type pn-junction structures J₃, J₄are arranged to have a second junction grading coefficient m₂, withm₂=0.33±0.10. The latter may represent a nearly linearly gradedjunction.

Based on the above evaluations for some embodiments of the semiconductordevice 100, with i∈{1, 2}, the parameters a₁ and a₂ (=radii r₁, r₂) ofthe ellipse equation comply with the following equations:

${a_{1} = {\frac{1}{4}\sqrt{{( \frac{C_{{J\; 0},1}}{C_{{J\; 0},2}} )^{3}( \frac{V_{J1}}{V_{J2}} )^{2}} + 1}}};$and$a_{2} = {\frac{1}{4}{\sqrt{{( \frac{C_{{J\; 0},2}}{C_{{J\; 0},1}} )^{3}( \frac{V_{J2}}{V_{J1}} )^{2}} + 1}.}}$

According to a further embodiment, the pn-junction structures J₁, J₂ andJ₃, J₄ of the first and the second type/pair 102, 104 are arranged tohave a ratio of the zero bias capacitances C_(Jo-1), C_(Jo-2) whichcomplies with the following condition:

${1\frac{1}{4}} < \frac{C_{{J\; 0},1}}{C_{{J\; 0},2}} < {4.}$

According to a further embodiment, the pn-junction structure of the i-thtype forms an i-th type diode structure with an anode region and acathode region. Further, the semiconductor device 100 may comprise afirst connecting terminal 107 and a second connecting terminal 108,wherein the “n” pairs 102, 104 ( . . . ) of pn-junction structures J₁-J₄( . . . ) are connected between the first and second terminal 107, 108.

According to a further embodiment, the “n” pairs 102, 104 ( . . . ) ofpn-junction structures J₁-J₄ ( . . . ) are arranged in a stackedconfiguration in a semiconductor substrate. According to a furtherembodiment, differently doped semiconductor regions of the pn-junctionstructures extend vertically with respect to a main surface region ofthe semiconductor substrate into the semiconductor substrate, andwherein the main portion of the area of the metallurgical pn-junction isa planar pn-junction which extend in parallel to a main surface regionof the semiconductor substrate. According to a further embodiment, thetwo pn-junction structures of i-th pair may be arranged together in astacked configuration in the semiconductor substrate. According to afurther embodiment, one of the two pn-junction structures of the firstpair may be arranged in a stacked configuration in the semiconductorsubstrate with one of the two pn-junction structures of the second pair.According to a further embodiment, the stacked configuration maycomprise a pn-structure with a floating base region in the semiconductorsubstrate.

FIGS. 5a and 5b show a schematic cross-sectional view of thesemiconductor device 100 according to an embodiment having, for example,the four anti-serially connected pn-junction structures J₁, J₂, J₃, J₄according to an embodiment (see e.g., FIG. 1a ), wherein the first stackor pair 102 comprises the pn-junction structures J₁, J₂ of the firsttype (i=1), and wherein the second stack or pair 104 comprises thepn-junction structures J₃, J₄ of the second type (i=2).

As shown in FIGS. 5a and 5b , the semiconductor device 100 comprises thesemiconductor substrate 120 having a first main surface portion 120 aand a second main surface portion 120 b on opposing main sides of thesemiconductor substrate 120.

The following exemplary description of the different layers and regionsof the semiconductor substrate 120 essentially extends from the secondmain surface portion 120 b to the first main surface portion 120 of thesemiconductor substrate 120. The different regions and structures in thesemiconductor substrate 120 may be manufactured, for example, during theso-called front end of line (FEOL) process stage.

The semiconductor substrate 120 may comprise a low ohmic n-typesubstrate 120-1. A p-type semiconductor layer 120-2 is arranged on then-type substrate 120-1. The p-type semiconductor layer 120-2 (e.g.,p-epi layer 120-2) may be epitaxially applied on the n-type substrate120-1. The p-type semiconductor layer 120-2 comprises a buried p-typesemiconductor layer 120-3 (P buried layer 120-3). The buried p-typesemiconductor layer 120-3 may be formed e.g., in form of a blanket(unmasked) implantation of a p-type dopant in the semiconductor layer120-2.

A further p-type layer 120-4 (e.g., p-epi layer 120-4) is arranged onthe p-type layer 120-2 with the buried p-type layer 120-3. The p-typesemiconductor layer 120-4 may be epitaxially applied on the p-type layer120-2. Alternatively, layer 120-4 may also be realized by an i-type(i.e., intrinsic or not intentionally doped) layer.

In the second epitaxial layer 120-4, a p-type well region 120-5 (p-well120-5) may be arranged. The p-type well region 120-5 may be formed afterhaving conducted a LOCOS oxidation of the main surface area 120 a of thep-type layer 120-4 of the semiconductor substrate 120 and by conductinga blanket implantation step. Based on this approach, no lithographicalresist mask would be necessary on the surface area 120 a of the p-typelayer 120-4, but a self-aligned implantation process could be conducteddue to the LOCOS oxidation on the surface 120 a. A LOCOS process(LOCOS=LOCal OXidation of Silicon) is a microfabrication process wheresilicon dioxide is formed in selected areas on a silicon wafer, i.e.,the semiconductor substrate 120, having the S_(i)-S_(i)O₂ interface at alower point or plane than the rest of the silicon main surface area 120a. Of course p-well 102-5 may also be formed by employing lithographymethod generally known in the art.

As shown in FIGS. 5a and 5b , the pn-junction structures J₁, J₃ and thepn-junction structures J₂, J₄ may be arranged in separated semiconductorareas 122, 124 of the semiconductor substrate 120, wherein the separatedareas 122, 124 may be achieved by means of so-called deep isolationtrenches 130 which laterally confine and/or laterally surround thesemiconductor regions 122, 124 with the pn-junction structures J₁, J₃and J₂, J₄. The deep isolation trenches 130 may be formed for example bymeans of RIE process steps (RIE=reactive ion etching) in thesemiconductor substrate 120, wherein the achieved trenches may be linedwith an oxide material 134, e.g., a SiO₂ liner, by means of a trenchliner oxidation process and filled by means of a semiconductor material132, e.g., poly-silicon.

The semiconductor device 100 further comprises highly doped n-typecontact regions 120-7 in the form of implantation regions adjacent tothe surface area of the p-type well 120-5. N-type contact region 120-7may also be regarded simply as a shallow n-region 120-7 or as an emitterregion in some embodiments. The n-type contact regions 120-7 may beformed by means of an n-contact implantation process step, e.g., bymeans of a blanket implantation, which may be self-aligned by means ofthe (above described) LOCOS process so that no lithographical resistmask is necessary.

As a further (e.g., final) process step of the front end of line processfor processing the semiconductor substrate 120, an oxide material 128may be deposited on the first main surface area 120 a of thesemiconductor substrate 120. The semiconductor device 100 may furthercomprise a contact and metallization layer stack 140 (BEOL stack,BEOL=back end of line) on the first main surface area 120 a of thesemiconductor substrate 120 for providing interconnections 110 (forexample contact plugs or vias) and interconnect layers 107, 108 for thesemiconductor device(s) 100 and, optionally, for further circuitelements (not shown in FIGS. 5 a and 5 b) in the semiconductor substrate120. The contact structures and (structured) metallization layers of themetallization stack 140 may be formed by means of BEOL process steps.Finally, the semiconductor devices 100 may be packaged and separated(diced), if a plurality of semiconductor devices 100 are fabricated inthe semiconductor substrate 120, such as a semiconductor wafer 120. Forexample, a chip scale packaging process comprising, for instance, theformation of electrodes (or pads) as the top layer of the metallizationstack 140 and a dicing process.

As shown in FIGS. 5a and 5b , the n-type contact region 120-7 (=cathoderegion) and the p-type well region 120-5 (=anode region) form the firsttype pn-junction structure J₁ and J₂, respectively, in the differentsemiconductor substrate areas 122 and 124. Moreover, the buried p-typelayer 120-3 (=anode region) and the n-type substrate 121 (=cathoderegion) form the second type pn-junction structures J₃ and J₄,respectively, in the separated semiconductor regions 122, 124 of thesemiconductor substrate 120.

FIG. 5b shows a schematic calculated plot of an exemplary doping profileof the semiconductor device 100 of FIGS. 5a and 5b , wherein differentdoping concentrations in the p-type well 120-5 may be achieved bydifferent implantation doses, which are indicated with “36” to “42”. Theplot of FIG. 5c further contains an exemplary indication of theapproximate extension of the different layers and/or regions of the ofthe semiconductor substrate 120 of FIGS. 5a and 5b . The metallurgicaljunction between n-type region 120-7 and p-type region 120-5 falls inthe declining slope of the p-type implantation profile of region 120-5.With a sufficiently steep slope of the n-type implantation of n-typeregion 120-7, the C(V) properties of the pn-junction formed by regions120-5 and 120-7 may represent hyper-abrupt character and thus may have agrading coefficient>0.5.

FIG. 6a shows a schematic cross-sectional view of the semiconductordevice 100 along the cut line A-B-C-D in the schematic top view throughthe semiconductor device 100 of FIG. 6b . The semiconductor device 100has, for example, the four anti-serially connected pn-junctionstructures J₁, J₂, J₃, J₄ according to an embodiment (see e.g., FIG. 1a). The pn-junction structures J₁, J₃ (vertical device 1) may comprise afirst npn-structure with a first floating base region in thesemiconductor substrate 120, wherein the pn-junction structures J₂, J₄comprises a second npn-structure with a second floating base region inthe semiconductor substrate 120. The floating base regions arerespectively formed by the p-type parts between the n-type substrate 120and the n-type contact region 120-7, i.e., for instance by p-typeregions 120-2 to 120-5.

As discussed with respect to FIGS. 5a, 5b and 5c , with respect to thefirst and second pair 102, 104 of pn-junction structures J₁, J₂ and J₃,J₄, which are anti-serially connected, the first type pn-junctionstructures J₁ and J₂ may have (essentially) the same layout and dopingprofile and have the grading coefficient m₁, wherein the second typepn-junction structures J₃ and J₄ may also have (essentially) the samelayout and doping profile and have the second junction gradingcoefficient m₂.

According to an embodiment, the semiconductor device forms a discreteESD device (ESD=electrostatic discharge) having a TVS functionality, forexample.

According to further embodiments, the semiconductor device 100 may haven (at least two) pairs of anti-serially connected pn-junction structures102, 104 ( . . . ) with adjusted junction grading coefficients m₁, m₂ .. . m_(n), wherein (at least) one of the n pairs 102, 104 ( . . . ) ofthe pn-junction structures J₁-J₄ ( . . . ) comprises a “composite” diodestructure, to adjust and obtain a desired behavior regarding thebreakdown voltage of the device 100 and to provide an at least reducedor a minimum generation of a spurious odd harmonics, e.g., thirdharmonics. The device 100 may for instance be used for TVS (TransientVoltage Suppressor) devices.

FIG. 7a shows a schematic diagram of the semiconductor device 100 havingn=2 pairs 102, 104 of anti-serially connected pn-junction structures,wherein (at least) one pair 102 of the at least two pairs 102, 104 ofthe pn-junction structures is arranged to have a junction type which isdescribed here as a composite pn-junction structure (composite diodestructure) and will be detailed with reference to FIG. 7b below.

FIG. 7b shows only the first pair 102 of the semiconductor device 100shown in FIG. 7a which is formed as a pair of two composite pn-junctionstructures 102-1, 102-2. The first composite pn-junction structure 102-1comprises a first partial pn-junction structure J₁₁ and a second partialpn-junction structure J₁₂ and the second composite pn-junction structure102-2 comprises the first partial pn-junction structure J₂₁ and thesecond partial pn-junction structure J₂₂. That is to say the first pair102 of FIGS. 7a and 7b is formed by a pair of anti-serially connectedcomposite pn-junction structures 102-1, 102-2 each of which has parallelconnection of a first partial pn-junction structure J₁₁, J₂₁ and asecond partial pn-junction structure J₁₂, J₂₂. The first partialpn-junction structures J₁₁, J₂₁ have a first partial junction gradingcoefficient m₁₁, a first partial junction voltage potential V_(J11) anda first partial zero bias capacitance C_(Jo11), wherein the secondpartial pn-junction structures J₁₂, J₂₂ have a second partial junctiongrading coefficient m₁₂, a second partial junction voltage potential V₁₂and a second partial zero bias capacitance C_(Jo12), which can bedifferent to the first partial junction grading coefficient m₁₁, thefirst partial junction voltage potential V_(J11) and the first partialzero bias capacitance C_(Jo11) for example. Based on a combination ofthe first and second partial junction grading coefficients m₁₁, m₁₂, afirst effective junction grading coefficient m₁ of the respectivecomposite pn-junction structure 102-1 and 102-2 results. That is to saythe composite pn-junction structures 102-1 and 102-2 behave aspn-junction structures having an effective junction grading coefficientm₁, an effective junction potential V_(J1), and an effective zero biasjunction capacitance C_(Jo1). This effective behavior of the compositepn-junction structure as a simple pn-junction structure is indicated inFIG. 7b by the correspondence of the composite pn-junction structure102-1 to the pn-junction structure J₁ and of the composite pn-junctionstructure 102-2 to the pn-junction structure J₂. Correspondingly, thevoltage dependent capacitance characteristics of the compositepn-junction structures can, in many cases, be satisfactorily describedor modeled by the expression A1 above, taking m_(i) as the effective(combined) junction grading coefficient and similarly for the junctionpotential V_(Ji) and the zero bias junction capacitance C_(Joi).

In other words, the semiconductor device 100 as shown in FIGS. 7a and 7baccording to an embodiment comprises a first parallel circuit 102-1 ofthe first partial pn-junction structure J₁₁ and the second partialpn-junction structure J₁₂, and a second parallel circuit 102-2 of thefirst partial pn-junction structure J₂₁ and the second partialpn-junction structure J₂₂, wherein the first and second parallel circuit102-1, 102-2 are anti-serially connected. The anti-serially connectedfirst and second parallel circuits 102-1, 102-2 form the first pair 102of the pn-junction structures J₁, J₂ which is serially connected to thesecond pair 104 of the pn-junction structures J₃, J₄ as indicated inFIG. 7 a.

That is to say, according to embodiments of the semiconductor device100, at least one pair 102 of the n pairs 102, 104 ( . . . ) ofpn-junction structures J₁-J₄ ( . . . ) may be arranged to form acomposite pn-junction structure 102 as shown in FIG. 7b having firstpartial pn-junction structure J₁₁, J₂₁ and second partial pn-junctionstructure J₁₂, J₂₂ connected in parallel, wherein the first partialpn-junction structures J₁₁, J₂₁ have a first partial junction gradingcoefficient m₁₁, and wherein the second partial pn-junction structuresJ₁₂, J₂₂ have a second partial junction grading coefficient m₁₂, whichmay be different in some embodiments to the first partial junctiongrading coefficient m₁₁. The resulting effective junction gradingcoefficient m₁ of the composite pn-junction structure 120 is based on acombination of the first and second partial junction gradingcoefficients m₁₁, m₁₂.

In order to provide a further explanation of the present concept in formof the described implementations and embodiments of the semiconductordevice 100 according to FIGS. 7a and 7b , the following discussion withrespect to FIGS. 8a-8c relate to the exemplary technical analysis on thefield of semiconductor devices, e.g., on the field of discrete ESDprotection devices and TVS devices, respectively, by the applicant andthe technical findings and conclusions resulting therefrom.

As shown in FIG. 7a , the semiconductor device 100 with the resultingjunction grading coefficients m₁, m₂ of the first (102) and second pair(104) of pn-junction structures can be realized with a large degree offreedom. In particular, a pn-junction structure with a large freedom oftuning the breakdown voltage with a grading coefficient m≥0.5 can berealized as a composite pn-junction structure and used for thesemiconductor device 100 of some embodiments.

In the conventional semiconductor technologies, there is a difficulty torealize hyper-abrupt junctions with low breakdown voltages below 25 V oreven below 16 V or 12 V with a controllable grading coefficient m>0.5.Some embodiments provide the semiconductor device 100 with both desiredproperties, i.e., a low breakdown voltage and adjustable gradientcoefficient of at least 0.5. This is due to the fact that conventionallyused processing steps in semiconductor technology, such as implantationand diffusion, yield dopant profiles that show some grading in a narrowregion around the metallurgical junction. The space-charge region, whichdetermines the capacitance vs. voltage behavior and the breakdownvoltage of a pn-junction, is extending around the metallurgicaljunction. In case of a low breakdown voltage the doping concentrationsare high and the extent of the space charge region is small. Withincreasing breakdown voltage the doping concentration at one or bothsides of the metallurgic junction is decreasing and the width of thespace charge region is increasing. Due to the inevitable grading nearthe metallurgical junction low-voltage breakdown junctions will inpractice see a more or less graded profile, instead of the desiredabrupt or hyper-abrupt doping profile. Therefore the combination of lowbreakdown voltage and a grading coefficient m≥0.5 is difficult berealized with semiconductor processes that are conventionally used inmass production of semiconductor devices and circuits.

To summarize, higher doping levels lead to a less extended space chargeregion (=depletion region) and, thus, to a low(er) breakdown voltageV_(bd). Moreover, a resulting more linear graded junction behavior leadsto a small(er) gradient coefficient m.

A high(er) grading coefficient m≥0.5 requires a more (or hyper) abruptdoping profile. In case of a lower doping level at one side ofmetallurgical junction the depletion layer will extend further into thislower doped region. Therefore, the depletion layer is not restricted toa narrow region around the metallurgical junction as in the case ofhigher doping levels, in which usually the doping profile is showing amore or less linear grading. Because the depletion region extends beyondthis graded region close to the metallurgical junction in case of alower doping level, the C(V) characteristics of the lower doped junctioncan more easily be adapted to a grading coefficient m≥0.5. At the sametime a low(er) doping level leads to a higher break down voltage V_(bd).

Therefore, the combination of low breakdown voltage and a gradingcoefficient m≥0.5 is difficult to realize with the conventionaltechnology.

To overcome this limitation, the embodiments, as shown in FIGS. 7a and7b introduce a concept to obtain a junction (pn-junction structure) withboth desired properties, i.e., a predetermined low breakdown voltage ofnot more than 25 V and predetermined grading coefficient equal to orabove 0.5 by subdividing the junction into two areas, i.e., into partialpn-junction structures that together from a composite pn-junctionstructure:

-   -   (1) one active area with a higher well implantation dose, which        results in a part of the pn-junction J₁₁, J₂₁ with a low        predetermined breakdown voltage and a grading coefficient        m₁₁<0.5, and    -   (2) another active area with a lower well implant dose, which        results in a part of the pn-junction J₁₂, J₂₂ with a breakdown        voltage higher than the predetermined one and a grading        coefficient m₁₂>0.5.

The overall behavior of this composite pn-junction 102-1 and 102-2,respectively, shows a breakdown voltage that is determined by the higherwell doping and the grading coefficient of the capacitance-vs-voltagecharacteristics is determined by the parallel connection in the twobranches of the first and second partial pn-junction structures J₁₁, J₁₂and J₂₁, J₂₂, respectively.

By adjusting (1) the grading coefficients m₁₁, m₁₂ in the two regions ofthe first and second partial pn-junction structures J₁₁, J₁₂ and J₂₁,J₂₂ (by well implantation dose and energy, as well by further diffusionsteps) and by adjusting (2) the area ratio of the two regions of thefirst and second partial pn-junction structures J₁₁, J₁₂ and J₂₁, J₂₂with different well implantation, the resulting effective gradingcoefficient m₁ of the resulting composite junction structure 102-1,102-2 can be adjusted to a target value close to the value that yield aminimized third harmonic (H3) generation. In some embodiments, for thepair 102 of the composite junctions 102-1 and 102-2 a zero biascapacitance (C_(Jo)) of J₁₁ and J₂₁ (as well as of J₁₂ and J₂₂,respectively) may be arranged to be equal from the perspective offorming a symmetric device 100 for suppressing also generation of even(e.g., 2nd) harmonics. Similar considerations hold for the junctionvoltage potentials (V_(Jo)) of the partial pn-junction structures J₁₁and J₂₁ (as well as J₁₂ and J₂₂, respectively) as well as for the arearatios of the partial pn-junctions in each of the composite structures102-1 and 102-2 forming the pair of composite pn-junction structures102. In the concept described above a pair of composite pn-junctions102-1 and 102-2 is realized in which the breakdown voltage and the netgrading coefficient can be both controlled in a much larger parameterrange by technology and physical design or layout adjustments.

FIG. 8a shows a schematic simulated plot of the resulting junctiongrading coefficient m₁ as a function of the doping concentration basedon different implantation doses. To be more specific, the simulatedCapacitance vs. Voltage characteristics of the pn-junction between anhighly n-doped shallow contact region and the p-doped well region areshown in FIG. 8a for the doping profiles shown in FIG. 5c (described inmore detail above) for semiconductor region 120-4 comprising regions120-7 and 120-5 (cf. e.g., FIGS. 5a and 5b ), wherein equal numbers(36-42) denote corresponding doping profiles. From this figure, it canbe seen that with low implantation doses for the p-well hyper-abruptjunctions with m>0.5 can be obtained.

FIG. 8b shows a schematic simulated plot of the resulting breakdownvoltage as a function of the doping concentration based on differentimplantation doses and doping profiles as indicated by the same numbersas in FIGS. 8a and 5c . However, as discussed above, the breakdownvoltage of the junction with the lowest p-well doses and highest gradingcoefficients tend to have high breakdown voltages, as shown in FIG. 8b .In the case of this simulation example it is shown that, if for minimum3rd harmonic generation a grading coefficient between 0.5 and 0.6 isrequired, the junction would have a breakdown voltage of 40 V or higherwithout using a composite pn-junction structure as explained above.

FIG. 8c shows the resulting, combined junction grading coefficient m₁ ofthe composite pn-junction structure 102-1 (or 102-2) as a function ofthe area ratio between the active areas of the first and second partialpn-junction structures J₁₁ and J₁₂ (or J₂₁ and J₂₂) of the compositepn-junction structure 102-1 (102-2) based on two adjusted partialjunction grading coefficients m₁₁ (of J₁₁ or J₂₁) and m₁₂ (of J₁₂ orJ₂₂). The doping profiles of the first and second partial pn-junctionstructure in this case correspond to numbers 37 and 41 shown in FIG. 5c(see also respective numbers in FIGS. 8a and 8b ). As discussed abovethe breakdown voltage of the junction with the lowest p-well doses andhighest grading coefficients tend to have high breakdown voltages, asshown in the FIG. 8b . The relative area contribution can be easilycontrolled by the physical design (layout) of the device.

More generally, the above described composite junction 102-1 may bedescribed as 120-i being placed as the i-th type pn-junction structure.Hence, according to an embodiment, the first partial pn-junctionstructure is arranged to have a first partial junction gradingcoefficient mi1>0.5, and wherein the second partial pn-junctionstructure is arranged to have a second partial junction gradingcoefficient m_(i2)<m_(i1), e.g. m_(i1) may be between 0.30 and 0.5.

According to an embodiment, the first and second partial pn-junctionstructures J₁₁, J₂₁, and J₁₂, J₂₂ are arranged in a semiconductorsubstrate, wherein said combination proportionately depends on an arearatio between an active area parallel to a first main surface area ofthe semiconductor substrate of the first and second partial pn-junctionstructures J₁₁ and J₁₂ of the composite pn-junction structure 102-1 aswell as J₂₁ and J₂₂ of the composite pn-junction structure 102-2.According to an embodiment, the first and second partial pn-junctionstructures J₁₁, J₁₂ of the first composite pn-junction structure 102-1and the first and second partial pn-junction structure J₂₁, J₂₂ of thesecond composite pn-junction structure 102-2 maybe arranged together ina laterally isolated common region of the semiconductor substrate.According to an embodiment, the first and second partial pn-junctionstructures vertically extend in a depth direction with respect to afirst main surface area of the semiconductor substrate into thesemiconductor substrate.

FIGS. 9a and 9d show schematic cross-sectional views of furtherexemplary implementations of the semiconductor device 100 comprising apair of composite pn-junction structures. FIG. 9b shows a schematicsimulated plot of the different exemplary doping profiles also shown inFIG. 5c and now employed for the semiconductor device of FIG. 9a . FIG.9c shows a schematic top view through the semiconductor device of FIG.9a in the plane through the composite type pn-junction structuresshowing the “active” areas of the first and second partial anode regions120-5, 120-6 of the composite pn-junction structures J₁ and J₂ forexample.

In the figures and the specification identical elements and elementshaving the same functionality and/or the same technical or physicaleffect are provided with the same reference numbers or are identifiedwith the same name. Thus, in the following description of theembodiments of the semiconductor device 100 in FIGS. 9a and 9d , a mainfocus is directed to the respective differences and adaptations betweenthe different implementations of the semiconductor device 100 whencompared, for example, to the embodiments of the semiconductor device100 in FIGS. 5a, 5b, 5c and 6a -6 b.

FIGS. 9a and 9d show different schematic cross-sectional views of thesemiconductor device 100 having, for example, the two pairs ofanti-serially connected pn-junction structures J₁, J₂ (=first pair 102)and J₃, J₄ (=second pair 104) according to an embodiment, wherein thefirst pair 102 comprises the composite pn-junction structures 102-1,102-2, and wherein the second pair 104 comprises the pn-junctionstructures J₃, J₄ (see for example FIG. 7a ), to adjust and obtain forinstance a desired TVS behavior (TVS=transient voltage suppressor) ofthe semiconductor device 100 regarding its breakdown voltage andjunction grading coefficients.

The first composite pn-junction structure 102-1 comprises the firstpartial pn-junction structure J₁₁ having the first partial junctiongrading coefficient m₁₁ and the second partial pn-junction structure J₁₂having the second partial junction grading coefficient m₁₂. The secondcomposite pn-junction structure 102-2 comprises the third partialpn-junction structure J₂₁ (substantially equal structure as J₁₁ alsoregarding zero bias capacitance C_(Jo) and junction potential V_(Jo))having also the partial junction grading coefficient m₁₁ and the partialpn-junction structure J₂₂ (substantially equal structure as J₁₂ alsoregarding zero bias capacitance C_(Jo) and junction potential V_(Jo))having the partial junction grading coefficient m₁₂. The resultingjunction grading coefficient m₁ of the first and second compositepn-junction structures 102-1, 102-2 is based on a combination of thefirst and second partial junction grading coefficients m₁₁, m₁₂.

As shown in FIG. 9a , the first composite pn-junction structure 102-1can be implemented by using two different implantation areas 120-5,120-6 in the substrate region 122. Thus, the n-type contact region 120-7in the substrate region 122 is embedded in the adjacent implantationareas 120-5, 120-6. The second composite pn-junction structure 102-2 canbe implemented by using two different implantation areas 120-5, 120-6 inthe substrate region 124. Thus, the further n-type contact region 120-7in the substrate region 124 is embedded in the further adjacentimplantation areas 120-5, 120-6.

As shown in FIG. 9a , the partial pn-junction structures J₁₁, J₁₂ may bearranged in the semiconductor area 122 of the semiconductor substrate120 (as abutted partial pn-junction structures J₁₁, J₁₂), wherein thepartial pn-junction structures J₂₁, J₂₂ may be arranged in the furthersemiconductor area 124 of the semiconductor substrate 120 (as abuttedpartial pn-junction structures J₂₁, J₂₂). The separated areas 122, 124may be achieved by means of so-called deep isolation trenches 130 whichlaterally confine and/or laterally surround the semiconductor regions122, 124. Moreover, the buried p-type layer 120-3 (=anode region) andthe low ohmic n-type substrate 121 (=cathode region) form the secondtype pn-junction structures J₃ and J₄, respectively, in the separatedsemiconductor regions 122, 124 of the semiconductor substrate 120.

FIG. 9b shows a schematic simulated plot of different exemplary dopingprofiles for the semiconductor device 100 of FIG. 9a . The differentdoping concentrations of the implantation areas 120-5, 120-6 in thep-type layer 120-4 maybe achieved by using different implantation doses,which are indicated with “36” to “42” in FIG. 9b . The plot furthercontains an indication of the approximate extensions of the differentlayers and/or regions of the semiconductor substrate 120. As shown inFIG. 9a , the first composite pn-junction structure 102-1 having thefirst and second partial pn-junction (diode) structures J₁₁, J₁₂comprises two p-type well regions 120-5, 120-6. A p-well 120-5 dopingconcentration profile (A) results, for example, in the first partialjunction grading coefficient m₁₁. A p-well 120-6 doping concentrationprofile (B), which may be lower than the p-well 120-5 dopingconcentration (A), results in the second partial junction gradingcoefficient m₁₂, e.g., with m₁₂>m₁₁. Based on the first and secondpartial junction grading coefficients m₁₁, m₁₂, an effective net gradingcoefficient m1 of the composite junction 102-1 may be achieved.

As higher doping levels lead to a less extended space charge region(=depletion region) and, thus, to a low(er) breakdown voltage V_(bd), aresulting more linear graded junction behavior leads to a small(er)gradient coefficient m. A high(er) grading coefficient m requires a more(or hyper) abrupt doping profile. However, there are practicaldifficulties in creating “ideal” abrupt profiles. Therefore, for forminga pn-junction structure with a grading coefficient m≥0.50, a wide(r)space charge region with low(er) doping level may be necessary. Alow(er) doping level leads to a high(er) break down voltage V_(bd).

The above evaluations with respect to the schematic simulated plot ofdifferent exemplary doping profiles are correspondingly applicable tothe second composite pn-junction structure 102-2 of the first pair ofpn-junction structures 102 and the resulting effective net gradingcoefficient m₁.

FIG. 9c shows a schematic top view of a possible layout of thesemiconductor device 100 of FIG. 9a showing the extension of the“active” areas of the first partial anode region 120-5 (having thehigher p-well doping implantation) and of the second partial anoderegion 120-6 (having the lower p-well doping implantation) of thecomposite type pn-junction structure 102-1 and 102-2. The exemplary arearatio is about 40% of the first partial anode region 120-5 and 60% ofthe second partial anode region 120-6.

By optimizing the layout the ratio of the areas which are defined by thelower and the higher dopant concentration of the p-well regions 120-6,120-5 can be adjusted to achieve the target (optimum) value of thejunction grading coefficient m₁>0.5, e.g., m₁˜0.55 while maintaining abreakdown voltage of not more than 25 V.

As shown in FIG. 9d , the first pair of partial pn-junction structuresJ₁₁, J₁₂ may be arranged in the semiconductor area 122 of thesemiconductor substrate 120, wherein the second pair of partialpn-junction structures J₂₁, J₂₂ may be arranged in the furthersemiconductor area 124 of the semiconductor substrate 120. The separatedareas 122, 124 may be achieved by means of so-called deep isolationtrenches 130 which laterally confine and/or laterally surround thesemiconductor regions 122, 124.

As shown in FIG. 9d , a p-type well region 120-5 (p-well 120-5) isarranged in the second epitaxial p-type layer 120-4 in the semiconductorregions 122 and 124, wherein the p-type well 120-5 only partiallysurrounds the highly doped n-type contact regions 120-7 in the p-typelayer 120-4 of the semiconductor substrate 120. Thus, in thesemiconductor region 122, the highly doped n-type contact regions 120-7and the second epitaxial p-type layer 120-4 form the first partialpn-junction structure J₁₁, wherein the p-type well region 120-5 and thehighly doped n-type contact region 120-7 form the second partialpn-junction structure J₁₂ (as abutted partial pn-junction structuresJ₁₁, J₁₂). Accordingly, in the semiconductor region 124, the highlydoped n-type contact regions 120-7 and the second epitaxial p-type layer120-4 form the third partial pn-junction structure J₂₁, wherein thep-type well region 120-5 and the highly doped n-type contact region120-7 form the fourth partial pn-junction structure J₂₂ (as abuttedpartial pn-junction structures J₂₁, J₂₂). Thus, the first and thirdpartial pn-junction structures J₁₂, J₂₁ do not comprise, for example, ap-type well region. As mentioned above, the layer 120-4 may also berealized by an i-type (i.e., intrinsic or not intentionally doped)layer.

Alternatively, a doping profile in the layer 120-4 can be adjusted toobtain a predetermined grading coefficient m₁₂ in partial pn-junctionstructures J₁₁ and J₂₁, respectively, by gradually adjusting the dopinglevel during epitaxial growth of the layer 120-4. In other words, ahyper abrupt junction behavior can be realized in partial pn-junctionsJ₁₁ and J₂₁ by creating a depth dependence of the doping level in theepitaxial layer by means of controlling the gas flow of dopant sourcegas during epitaxial layer growth.

Moreover, the buried p-type layer 120-3 (=anode region) and the n-typesubstrate 121 (=cathode region) form the second type pn-junctionstructures J₃ and J₄, respectively, in the separated semiconductorregions 122, 124 of the semiconductor substrate 120.

The p-type well region 120-5 (p-well 120-5) may be arranged in thesecond epitaxial p-type layer 120-4 by forming the required dopingprofile in the p-type semiconductor layer 120-4, e.g., during epitaxialgrowth or by performing an implantation step.

FIG. 9e shows a configuration of a composite pn-junction structure 102-1according to another embodiment. The composite pn-junction structure102-1 comprises a pn-junction between an n+ region 120-7 and a p-wellregion 120-5 and another adjoining voltage dependent capacitance,which—in this embodiment—may be formed by an inversion charge layer120-8 at an interface 135 between an oxide layer and a bulk or epi-layer120-4 of semiconductor material. The bulk semiconductor material or epilayer 120-4 may be p-doped or intrinsic (i.e., not intentionally doped)for example. One electrode (corresponding to the cathode) of thisvoltage dependent capacitance is formed by the inversion charge layer120-8 which is caused by the presence of fixed oxide charges 136 at ornear the semiconductor/oxide interface 135. Directly adjoining theinversion charge layer 120-8, the volume of semiconductor material isdepleted of mobile charges as indicated by depletion region 120-9 inFIG. 9e and the un-depleted semiconductor material below the depletedzone forms the other electrode (corresponding to the anode) of thevoltage dependent capacitance. The depletion zone is indicated in FIG.9e by means of dashed lines 137 schematically representing theboundaries of the depletion layer.

In some embodiments the doping profile of the p-well 120-5 near theedges and the semiconductor/oxide interfaces 135 is adjusted so thatalso in this region an inversion charge layer 120-8 is present and anelectrical connection between the n+ region 120-7 and the surroundinginversion charge layer 120-8 is established.

The characteristics of the voltage dependence capacitance formed due tothe electron inversion charge layer 120-8 may be modeled according toformula (A1) above which defines a grading coefficient, a zero biascapacitance and junction potential also for this kind of voltagedependent capacitance. In this respect, the voltage dependentcapacitance formed due to the presence of the inversion charge layer120-8 as described above is also considered a partial pn-junctionstructure J₁₁, J₁₂/J₂₁, J₂₂ in the context of the composite pn-junctionstructure 102-1, 102-2.

The effective grading coefficient of the composite pn-junction structure102-1 according to this embodiment is a combination of the gradingcoefficient of the pn-junction and the grading coefficient of thevoltage dependent capacitance formed due to the presence of the electroninversion charge layer 120-8. The relative contribution of both gradingcoefficients can be adjusted by (1) the doping profiles of therespective regions defining the pn-junction and the voltage dependentcapacitance 120-8, and (2) the relative areas of the pn-junction and thevoltage dependent capacitance 120-8.

The voltage dependent capacitance 120-8 may be surrounded by a channelstop region 120-10 which avoids that regions outside the intendedregion, where the voltage dependent capacitance 120-8 is formed,contribute to the voltage dependent capacitance.

The breakdown voltage V_(bd) of such a structure is determined by thepn-junction structure between the n+ region and the p-well region.

FIG. 9f shows yet another embodiment of the composite pn-junctionstructure. The voltage dependent capacitance of the embodiment shown inFIG. 9e is in FIG. 9f further extended by an inversion layer 120-8 vwhich is formed on the vertical sidewalls of a deep isolation trenchstructure 130. The other specifics are similar to the ones describedwith respect to FIG. 9e and are not repeated here.

Aspects of the invention may also embrace a method of manufacturing asemiconductor device comprising at least a first pair of pn-junctionstructures of a first type and a second pair of pn-junction structuresof a second type. The method may comprise a design step of determining afirst grading coefficient for the pn-junction structures of the firsttype and a second grading coefficient of the pn-junction structure ofthe second type, wherein the first grading coefficient is different fromthe second grading coefficient and at least one of the first gradingcoefficient and the second grading coefficient is less than 0.50,wherein the grading coefficients are determined to suppress generationof spurious third harmonics by the semiconductor device.

Exemplary embodiments may provide a semiconductor device comprising: “n”pairs of pn-junction structures, with n is an integer≥2, wherein thei-th pair, with i∈{1, . . . , n}, comprises two pn-junction structuresof the i-th type, wherein the two pn-junction structures of the i-thtype are anti-serially connected, wherein the pn-junction structure ofthe i-th type is arranged to have an i-th junction grading coefficientm_(i), wherein at least a first pair of the n pairs of pn-junctionstructures is arranged to have a first junction grading coefficient m₁with m₁∉{0.00,0.50} and m₁<0.50 and a second pair of the n pairs ofpn-junction structures is arranged to have a second junction gradingcoefficient m₂ with m₂ ∉{0.00,0.50}, and wherein the junction gradingcoefficients m₁, m₂ of the first and second pair of the n pairs ofpn-junction structures are adjusted to result in generation of aspurious third harmonic signal of the semiconductor device with a signalpower level (PH3), which is at least 10 dB lower than a reference signalpower level (PH3) of the spurious third harmonic signal obtained for areference case in which the first and second junction gradingcoefficients m₁, m₂ are 0.25.

According to an exemplary embodiment, the first to n junction gradingcoefficients m₁ to m_(n) comply within a tolerance range of ±0.05 withthe following ellipse equation:

${{\sum_{i = 1}^{n}( \frac{m_{i} - {0\text{,}25}}{a_{i}} )^{2}} = 1},{with}$${{\sum_{i = 1}^{n}( \frac{1}{a_{i}} )^{2}} = {16}},,$

wherein the parameters a_(i) are determined based on a zero biascapacitance C_(Joi) and a junction voltage potential V_(Ji) of thepn-junction structure of the i-th type.

Further exemplary embodiments may provide a semiconductor devicecomprising: “n” pairs of pn-junction structures, with n is an integer≥2,wherein the i-th pair, with i∉{1, . . . , n}, comprises two pn-junctionstructures of the i-th type, wherein the two pn-junction structures ofthe i-th type are anti-serially connected, wherein the pn-junctionstructure of the i-th type is arranged to have an i-th junction gradingcoefficient m_(i) wherein the first to n-th junction gradingcoefficients m₁ to m_(n) comply within a tolerance range of 0.05 withthe following ellipse equation:

${{\sum_{i = 1}^{n}( \frac{m_{i} - {0\text{,}25}}{a_{i}} )^{2}} = 1},{with}$${{\sum_{i = 1}^{n}( \frac{1}{a_{i}} )^{2}} = {16}},$

wherein at least a first pair of the n pairs of pn-junction structuresis arranged to have a first junction grading coefficient m₁ with m₁∉{0.00,0.50} and m₁<0.50 and a second pair of the n pairs of pn-junctionstructures is arranged to have a second junction grading coefficient m₂,with m₂ ∉{0.00,0.50}, wherein the parameters a_(i) are determined basedon a zero bias capacitance C_(Joi) and a junction voltage potentialV_(Ji) of the pn-junction structure of the i-th type.

According to an exemplary embodiment, said first pair of the n pairs ofpn-junction structures is arranged to have said first junction gradingcoefficient m₁ with m₁≤0.48.

According to an exemplary embodiment, said second pair of the n pairs ofpn-junction structures is arranged to have said second junction gradingcoefficient m₂ with m₂>0.50.

According to an exemplary embodiment, each of the first to n-thparameter “a₁ to a_(n)” is determined based on the n zero biascapacitances C_(Jo,1)-C_(Jo,ni); and on the n junction voltagepotentials V_(J1)-V_(Jn) of the n pairs of pn-junction structures.

According to an exemplary embodiment, the first to n-th parameter “a₁ toa_(n)” comply with the following equation:

$a_{i} = {\frac{1}{4}{\sqrt{\sum_{j = 1}^{n}{( \frac{C_{{J\; 0},i}}{C_{{J\; 0},j}} )^{3}( \frac{V_{Ji}}{V_{Jj}} )^{2}}}.}}$

According to an exemplary embodiment, the values for the first to “n-th”junction grading coefficients m_(i) to m_(n) are adjusted to result in athird-order intercept point IP3 of at least 50 dBm.

According to an exemplary embodiment, at least two of the first to n-thjunction grading coefficients m₁ to m_(n) are different.

According to an exemplary embodiment, for n=2 and C_(jo1)=C_(jo2), thefirst type pn-junction structure is arranged to have the first junctiongrading coefficient m₁ between 0.56 and 0.62, and wherein the secondtype pn-junction structure is arranged to have the second junctiongrading coefficient m₂ between 0.23 and 0.43.

According to an exemplary embodiment, for n=2, the pn-junctionstructures of the first and the second type are arranged to have a ratioof the zero bias capacitances C_(Jo-1), C_(Jo-2) which complies with thefollowing condition:

$\frac{1}{4} < \frac{C_{{J\; 0},1}}{C_{{J\; 0},2}} < {4.}$

According to an exemplary embodiment, the pn-junction structure of thei-th type forms an i-th type diode structure with an anode region and acathode region.

According to an exemplary embodiment, the semiconductor device mayfurther comprise a first connecting terminal and a second connectingterminal, wherein the “n” pairs of pn-junction structures are connectedbetween the first and second terminal.

According to an exemplary embodiment, the “n” pairs of pn-junctionstructures are arranged in a stacked configuration in a semiconductorsubstrate.

According to an exemplary embodiment, differently doped semiconductorregions of the pn-junction structures extend vertically with respect toa main surface region of the semiconductor substrate into thesemiconductor substrate, and wherein the main portion of the area of themetallurgical pn-junction is a planar pn-junction which extend inparallel to a main surface region of the semiconductor substrate.

According to an exemplary embodiment, the two pn-junction structures ofi-th pair are arranged together in a stacked configuration in thesemiconductor substrate.

According to an exemplary embodiment, one of the two pn-junctionstructures of a first pair of the n pairs of pn-junction structures isarranged in a stacked configuration in the semiconductor substrate withone of the two pn-junction structures of a second pair of the n pairs ofpn-junction structures.

According to an exemplary embodiment, the stacked configurationcomprises an npn-structure with a floating base region in thesemiconductor substrate.

According to an exemplary embodiment, at least one pair of the n pairsof pn-junction structures is arranged as a pair of two compositepn-junction structures each of which has a first partial pn-junctionstructure and a second partial pn-junction structure, wherein the firstpartial pn-junction structure has a first partial junction gradingcoefficient m_(i1), and wherein the second partial pn-junction structurehas a second partial junction grading coefficient m_(i2) different tothe first partial junction grading coefficient m_(i1), wherein thejunction grading coefficient m_(i) of the composite pn-junctionstructure is based on a combination of the first and second partialjunction grading coefficients m_(i1), m_(i2).

According to an exemplary embodiment, the first and second partialpn-junction structures are arranged in a semiconductor substrate,wherein said combination proportionately depends on an area ratiobetween an active area parallel to a first main surface area of thesemiconductor substrate of the first and second partial pn-junctionstructures.

According to an exemplary embodiment, the first and second partialpn-junction structure of the first type pn-junction structure and thefirst and second partial pn-junction structure of the second typepn-junction structure are arranged together in a laterally isolatedcommon region of the semiconductor substrate.

According to an exemplary embodiment, the first partial pn-junctionstructure is arranged to have a first partial junction gradingcoefficient m_(i1)>0.50, and wherein the second partial pn-junctionstructure is arranged to have a second partial junction gradingcoefficient m_(i2) between 0.30 and 0.5.

According to an exemplary embodiment, the first and second partialpn-junction structures vertically extend in a depth direction withrespect to a first main surface area of the semiconductor substrate intothe semiconductor substrate.

Although some aspects have been described as features in the context ofan apparatus it is clear that such a description may also be regarded asa description of corresponding features of a method. Although someaspects have been described as features in the context of a method, itis clear that such a description may also be regarded as a descriptionof corresponding features concerning the functionality of an apparatus.

In the foregoing Detailed Description, it can be seen that variousfeatures are grouped together in examples for the purpose ofstreamlining the disclosure. This method of disclosure is not to beinterpreted as reflecting an intention that the claimed examples requiremore features than are expressly recited in each claim. Rather, as thefollowing claims reflect, inventive subject matter may lie in less thanall features of a single disclosed example. Thus the following claimsare hereby incorporated into the Detailed Description, where each claimmay stand on its own as a separate example. While each claim may standon its own as a separate example, it is to be noted that, although adependent claim may refer in the claims to a specific combination withone or more other claims, other examples may also include a combinationof the dependent claim with the subject matter of each other dependentclaim or a combination of each feature with other dependent orindependent claims. Such combinations are proposed herein unless it isstated that a specific combination is not intended. Furthermore, it isintended to include also features of a claim to any other independentclaim even if this claim is not directly made dependent to theindependent claim.

1. (canceled)
 2. A semiconductor device comprising: “n” pairs ofpn-junction structures, with n is an integer≥2, wherein the i-th pair,with i∈{1, . . . , n}, comprises two pn-junction structures of the i-thtype, wherein the two pn-junction structures of the i-th type areanti-serially connected, wherein the pn-junction structure of the i-thtype comprises an i-th junction grading coefficient m_(i), and whereinat least a first pair of the n pairs of pn-junction structures comprisesa first junction grading coefficient m₁≤0.48 and a second pair of the npairs of pn-junction structures comprises a second junction gradingcoefficient m₂≥0.52.
 3. The semiconductor device according to claim 2,wherein the first to n junction grading coefficients m₁ to m_(n) complywithin a tolerance range of ±0.05 with the following ellipse equation:${{\sum_{i = 1}^{n}( \frac{m_{i} - {0\text{,}25}}{a_{i}} )^{2}} = 1},{with}$${{\sum_{i = 1}^{n}( \frac{1}{a_{i}} )^{2}} = {16}},$ whereinthe parameters a_(i) are determined based on a zero bias capacitanceC_(Joi) and a junction voltage potential V_(Ji) of the pn-junctionstructure of the i-th type.
 4. The semiconductor device according toclaim 2, wherein the first junction grading coefficient m₁=0.33±0.1, andwherein the second junction grading coefficient m₂=0.59±0.03.
 5. Asemiconductor device comprising: “n” pairs of pn-junction structures,with n is an integer 2, wherein the i-th pair, with i∈{1, . . . , n},comprises two pn-junction structures of the i-th type, wherein the twopn-junction structures of the i-th type are anti-serially connected,wherein the pn-junction structure of the i-th type comprises an i-thjunction grading coefficient m_(i), wherein the first to n-th junctiongrading coefficients m₁ to m_(n) comply with the following ellipseequation:${{\sum_{i = 1}^{n}( \frac{m_{i} - {0\text{,}25}}{a_{i}} )^{2}} = 1},{with}$${{\sum_{i = 1}^{n}( \frac{1}{a_{i}} )^{2}} = {16}},$ andwherein at least a first pair of the n pairs of pn-junction structurescomprises a first junction grading coefficient m₁≤0.48 and a second pairof the n pairs of pn-junction structures comprises a second junctiongrading coefficient m₂≥0.52, wherein the parameters a_(i) are determinedbased on a zero bias capacitance C_(Joi) and a junction voltagepotential V_(Ji) of the pn-junction structure of the i-th type.
 6. Thesemiconductor device according to claim 5, wherein each of the first ton-th parameter “a₁ to a_(n)” is determined based on the n zero biascapacitances C_(Jo,1)-C_(Jo,ni), and on the n junction voltagepotentials V_(J1)-V_(Jn) of the n pairs of pn-junction structures. 7.The semiconductor device according to claim 6, wherein the first to n-thparameter “a₁ to a_(n)” comply with the following equation:$a_{i} = {\frac{1}{4}{\sqrt{\sum_{j = 1}^{n}{( \frac{C_{{J\; 0},i}}{C_{{J\; 0},j}} )^{3}( \frac{V_{Ji}}{V_{Jj}} )^{2}}}.}}$8. The semiconductor device according to claim 5, wherein at least twoof the first to n-th junction grading coefficients m₁ to m_(n) aredifferent.
 9. The semiconductor device according to claim 5, wherein,for n=2 and C_(jo1)=C_(jo2), a first type pn-junction structure isarranged to have the first junction grading coefficient m₁ between 0.23and 0.43, and wherein a second type pn-junction structure is arranged tohave the second junction grading coefficient m₂ between 0.56 and 0.62.10. The semiconductor device according to claim 5, wherein, for n=2, thepn-junction structures of a first and a second type are arranged to havea ratio of the zero bias capacitances C_(Jo-1), C_(Jo-2) which complieswith the following condition:$\frac{1}{4} < \frac{C_{{J\; 0},1}}{C_{{J\; 0},2}} < {4.}$
 11. Thesemiconductor device according to claim 5, wherein the pn-junctionstructure of the i-th type forms an i-th type diode structure with ananode region and a cathode region.
 12. The semiconductor deviceaccording to claim 5, further comprising a first connecting terminal anda second connecting terminal, wherein the “n” pairs of pn-junctionstructures are connected between the first and second terminal.
 13. Thesemiconductor device according to claim 12, wherein the “n” pairs ofpn-junction structures are arranged in a stacked configuration in asemiconductor substrate.
 14. The semiconductor device according to claim13, wherein differently doped semiconductor regions of the pn-junctionstructures extend vertically with respect to a main surface region ofthe semiconductor substrate into the semiconductor substrate, and aplanar metallurgical pn-junction that extends in parallel to a mainsurface region of the semiconductor substrate.
 15. The semiconductordevice according to claim 14, wherein the two pn-junction structures ofi-th pair are arranged together in a stacked configuration in thesemiconductor substrate.
 16. The semiconductor device according to claim15, wherein one of the two pn-junction structures of a first pair of then pairs of pn-junction structures is arranged in a stacked configurationin the semiconductor substrate with one of the two pn-junctionstructures of a second pair of the n pairs of pn-junction structures.17. The semiconductor device according to claim 15, wherein the stackedconfiguration comprises an npn-structure with a floating base region inthe semiconductor substrate.
 18. The semiconductor device according toclaim 5, wherein at least one pair of the n pairs of pn-junctionstructures is arranged as a pair of two composite pn-junction structureseach of which has a first partial pn-junction structure and a secondpartial pn-junction structure, wherein the first partial pn-junctionstructure has a first partial junction grading coefficient m_(i1), andwherein the second partial pn-junction structure has a second partialjunction grading coefficient m_(i2) different to the first partialjunction grading coefficient m_(i1), and wherein the junction gradingcoefficient m_(i) of the composite pn-junction structure is based on acombination of the first and second partial junction gradingcoefficients m_(i1), m_(i2).
 19. The semiconductor device according toclaim 18, wherein the first and second partial pn-junction structure ofa first type pn-junction structure and the first and second partialpn-junction structure of a second type pn-junction structure arearranged together in a laterally isolated common region of asemiconductor substrate.
 20. The semiconductor device according to claim18, wherein the first partial pn-junction structure is arranged to havea first partial junction grading coefficient m_(i1)>0.50, and whereinthe second partial pn-junction structure is arranged to have a secondpartial junction grading coefficient m_(i2) between 0.30 and 0.5. 21.The semiconductor device according to claim 5, wherein the firstjunction grading coefficient m1=0.33±0.1, and wherein the secondjunction grading coefficient m2=0.59±0.03.